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參數(shù)資料
| 型號(hào)： | S29GL064M90TAIR42 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| 中文描述： | 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | MO-142-EC, TSOP-48 |
| 文件頁數(shù)： | 90/116頁 |
| 文件大?。?/td> | 1656K |
| 代理商： | S29GL064M90TAIR42 |
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88
S29GL-M MirrorBit
TM
Flash Family
S29GL-M_00_B6 October 10, 2006
D a t a S h e e t
AC Characteristics
Erase and Program Operations—S29GL032M Only
Notes:
1.
2.
3.
4.
5.
Not 100% tested.
See
Erase and Programming Performance
for more information
For 1–16 words/1–32 bytes programmed.
Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
If a program suspend command is issued within t
POLL
, the device requires t
POLL
before reading
status data, once programming resumes (that is, the program resume command has been
written). If the suspend command was issued after t
POLL
, status data is available immediately
after programming resumes. See
Figure 16
.
Parameter
Description
Speed Options
Unit
J EDEC
Std.
90
10
11
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
35
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
CEPH
CE# High during toggle bit polling
Min
20
ns
t
OEPH
OE# High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Single Word Program Operation (Note 2)
Typ
60
Accelerated Single Word Program Operation (Note 2)
Typ
54
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
BUSY
WE# High to RY/BY# Low
Min
90
100
110
ns
t
POLL
Program Valid before Status Polling
Max
4
μs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064M90TAIR60 | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TAIR70 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TFIR20 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray |
| S29GL064M90TFIR30 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TFIR4 | 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC |
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