- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365390 > S29GL064M90TAIR42 (SPANSION LLC) 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology PDF資料下載
參數(shù)資料
| 型號(hào)： | S29GL064M90TAIR42 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| 中文描述： | 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | MO-142-EC, TSOP-48 |
| 文件頁數(shù)： | 69/116頁 |
| 文件大?。?/td> | 1656K |
| 代理商： | S29GL064M90TAIR42 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁當(dāng)前第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁
October 10, 2006 S29GL-M_00_B6
S29GL-M MirrorBit
TM
Flash Family
67
D a t a S h e e t
The device does
not
require the system to preprogram prior to erase. The Embedded Erase algo-
rithm automatically programs and verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any controls or timings during these
operations.
After the command sequence is written, a sector erase time-out of 50 μs occurs. During the time-
out period, additional sector addresses and sector erase commands can be written. Loading the
sector erase buffer can be done in any sequence, and the number of sectors can be from one
sector to all sectors. The time between these additional cycles must be less than 50 μs, otherwise
erasure may begin. Any sector erase address and command following the exceeded time-out can
or cannot be accepted. It is recommended that processor interrupts be disabled during this time
to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase
command is written.
Any command other than Sector Erase or Erase Suspend during the
time-out period resets the device to the read mode.
Note that the Secured Silicon Sector,
autoselect, and CFI functions are unavailable when an erase operation is in progress
.
The system
must rewrite the command sequence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section
on DQ3: Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in
the command sequence.
When the Embedded Erase algorithm is complete, the device returns to reading array data and
addresses are no longer latched. The system can determine the status of the erase operation by
reading DQ7, DQ6, or DQ2 in the erasing sector. See
Write Operation Status
for information on
these status bits.
Once the sector erase operation starts, only the Erase Suspend command is valid. All other com-
mands are ignored. However, note that a
hardw are reset
immediately
terminates the erase
operation. If that occurs, the sector erase command sequence should be reinitiated once the de-
vice returns to reading array data, to ensure data integrity.
Figure 6
illustrates the algorithm for the erase operation. See
Erase and Programming Perfor-
mance
in
AC Characteristics
for parameters, and
Figure 18
for timing diagrams.
l
Notes:
1.
2.
See
Table 34
and
Table 35
for program command sequence.
See
DQ3: Sector Erase Timer
for information on the sector erase timer.
Figure 6. Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL064M90TAIR43 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR70 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR72 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR73 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR80 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064M90TAIR60 | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TAIR70 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TFIR20 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray |
| S29GL064M90TFIR30 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TFIR4 | 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。