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參數(shù)資料
| 型號(hào)： | RG82870P2 |
| 英文描述： | Controller Miscellaneous - Datasheet Reference |
| 中文描述： | 控制器雜項(xiàng)-數(shù)據(jù)表參考 |
| 文件頁(yè)數(shù)： | 32/157頁(yè) |
| 文件大?。?/td> | 1407K |
| 代理商： | RG82870P2 |
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Intel
82845MP/82845MZ Chipset-Mobile (MCH-M)
250687-002
Datasheet
127
R
6.3.
Power Characteristics
Table 36. Power Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Notes
TDP
Thermal Design Power
4.6
W
1
IVTT
Intel 845MP/845MZ Chipset MCH-M
VTT supply Current
2.4
A
2
IVCC1_5_CORE
1.5 V Core Supply Current
1.9
A
2,3
IVCC1_5_AGP
1.5 V AGP Supply Current
0.37
A
2,3
IVCC1_8
1.8 V Hub Interface Supply Current
0.20
A
2
IVCCSM
DDR System Memory Interface (2.5
V) Supply Current
1.9
A
2
ISUS_VCCSM
DDR System Memory Interface (2.5
V) Standby Supply Current
25
mA
ISDREF
DDR System Memory Interface
Reference Voltage (1.25 V) Supply
Current
10
mA
ISUS_SDREF
DDR System Memory Interface
Reference Voltage (1.25 V) Standby
Supply Current
1
mA
ITTRC
DDR System Memory Interface
Resister Compensation Voltage (1.25
V) Supply Current
40
mA
ISUS_TTRC
DDR System Memory Interface
Resister Compensation Voltage (1.25
V) Standby Supply Current
0
mA
NOTES:
1. This spec is the Thermal Design Power and it is the estimated maximum possible expected power generated in
a component by a realistic application. It is based on extrapolations in both hardware and software technology
over the life of the component. It does not represent the expected power generated by a power virus. Studies
by Intel indicate that no application will cause thermally significant power dissipation exceeding this
specification, although it is possible to concoct higher power synthetic workloads that write but never read.
Under realistic read/write conditions, this higher power workload can only be transient, and is accounted in the
Icc (Max) spec.
2. Pre-silicon specs have a +20% / -10% tolerance.
3. These current levels can happen simultaneously, and can be summed into one supply.
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