參數(shù)資料
型號: PN2000
文件頁數(shù): 93/105頁
文件大小: 2030K
代理商: PN2000
M
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers
with collector currents in the 100
μ
A to 30 mA range in common
emitter or common base mode of operation, and in low frequency
drift, high ouput UHF oscillators. Sourced from Process 40.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
12
20
2.5
50
V
V
V
mA
°
C
-55 to +150
MPS5179
MMBT5179
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN/MPS5179
350
2.8
357
*MMBT5179
225
1.8
556
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
mW
mW/
°
C
°
C/W
R
θ
JA
CBE
TO-92
C
B
E
SOT-23
Mark: 3C
Discrete POWE R & Signal
Technologies
1997 Fairchild Semiconductor Corporation
PN5179
CEB
TO-92
5179, Rev B
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