參數(shù)資料
型號: PN2000
文件頁數(shù): 25/105頁
文件大?。?/td> 2030K
代理商: PN2000
P
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
60
60
5.0
800
V
V
V
mA
°
C
-55 to +150
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
PZT2907A
B
C
C
SOT-223
E
PN2907A
CBE
TO-92
MMBT2907A
C
B
E
SOT-23
Mark: 2F
MMPQ2907
C
CCCCCCC
SOIC-16
E
BEBEBEB
NMT2907
SOT-6
Mark: .2B
C1
E1
C2
B1
E2
B2
Discrete POWE R & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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