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參數(shù)資料
| 型號(hào)： | PN202SQ |
| 英文描述： | PHOTOTRANSISTOR | DARLINGTON | 800NM PEAK WAVELENGTH | 30M | DOME-3.0 |
| 中文描述： | 光電晶體管|達(dá)林頓| 800NM峰值波長| 3000萬|穹頂- 3.0 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 341K |
| 代理商： | PN202SQ |
1
PNZ202S
(PN202S)
Darlington Phototransistor
For optical control systems
Features
Darlington output, high sensitivity
Easy to combine with red and infrared light emitting diodes
Small size ( 3) ceramic package
Darlington Phototransistors
*3
I
CE(L)
Classifications
Class
Q
R
S
I
CE(L)
(mA)
0.2 to 0.8
0.6 to 1.65
1.35 to 5
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
30
100
–25 to +80
–30 to +100
Unit
V
V
mA
mW
C
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)*3
λ
P
θ
t
r
, t
f*2
V
CE(sat)
Conditions
min
typ
0.1
max
0.5
5
Unit
μ
A
mA
nm
deg.
μ
s
V
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, L = 2 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100
I
CE(L)
= 1mA, L = 100 lx
*1
0.2
800
30
150
0.7
1.5
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
3.0
±
0.2
0.45
±
0.05
0.3
±
0.05
0.9
±
0.15
4
±
0
2
±
0
1
1
2
Unit : mm
1: Emitter
2: Collector
50
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Sig.IN
R
L
V
CC
Sig.OUT
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
Note) The part number in the parenthesis shows conventional part number.
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