參數(shù)資料
型號(hào): PN2000
文件頁(yè)數(shù): 6/105頁(yè)
文件大?。?/td> 2030K
代理商: PN2000
P
PN200
PN200A
MMBT200
MMBT200A
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
45
75
6.0
500
V
V
V
mA
°
C
-55 to +150
Symbol
Characteristic
Max
Units
PN200A
625
5.0
83.3
200
*MMBT200A
350
2.8
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
357
SOT-23
Mark: N2 / N2A
CBE
TO-92
C
B
E
Discrete POWE R & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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