參數(shù)資料
型號: PN2000
文件頁數(shù): 39/105頁
文件大?。?/td> 2030K
代理商: PN2000
PN3640
MMBT3640
PNP Switching Transistor
This device is designed for very high speed saturate switching at
collector currents to 100 mA. Sourced from Process 65. See
PN4258 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN3640
350
2.8
125
357
*MMBT3640
225
1.8
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
556
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
12
12
4.0
200
V
V
V
mA
°
C
-55 to +150
CBE
TO-92
C
B
E
SOT-23
Mark: 2J
P
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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