參數(shù)資料
型號(hào): PN2000
文件頁數(shù): 10/105頁
文件大?。?/td> 2030K
代理商: PN2000
NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch
requiring collector currents up to 500 mA. Sourced from Pro-
cess 19.
PN2222A
CBE
TO-92
PZT2222A
B
C
C
SOT-223
E
MMBT2222A
C
B
E
SOT-23
Mark: 1P
NMT2222
MMPQ2222
C
CCCCCCC
SOIC-16
E
BEBEBEB
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
40
75
6.0
1.0
V
V
V
A
°
C
-55 to +150
SOT-6
Mark: .1B
C1
E1
C2
B1
E2
B2
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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