參數(shù)資料
型號: PN2000
文件頁數(shù): 74/105頁
文件大?。?/td> 2030K
代理商: PN2000
P
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CES
Collector-Emitter Breakdown Voltage*
V
CEO(sus)
Collector-Emitter Sustaining Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CES
Collector Cutoff Current
ON CHARACTERISTICS*
h
FE
DC Current Gain
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 100
μ
A, V
BE
= 0
I
C
= 3.0 mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 6.0 V, V
BE
= 0
V
CE
= 6.0 V, V
BE
= 0, T
A
= 65
°
C
12
12
12
4.5
V
V
V
V
μ
A
μ
A
0.01
5.0
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
= 10 mA, V
CE
= 5.0 V,
f = 100 MHz
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
V
= 0.5 V, I
C
= 0,
f = 1.0 MHz
V
CB
= 5.0 V, I
E
= 0,
f = 1.0 MHz
700
700
MHz
MHz
C
ibo
Input Capacitance
3.5
pF
C
cb
Collector-Base Capacitance
3.0
pF
SWITCHING CHARACTERISTICS
t
on
Turn-On Time
t
d
Delay Time
t
r
Rise Time
t
off
Turn-Off Time
t
s
Storage Time
t
f
Fall Time
t
s
Storage Time
*
Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
Spice Model
V
CC
= 1.5 V, V
BE(off)
= 0 V,
I
C
= 10 mA, I
B1
= 1.0 mA
15
10
15
20
20
10
20
ns
ns
ns
ns
ns
ns
ns
V
CC
= 1.5 V, I
C
= 10mA
I
B1
= I
B2
= 1.0 mA
I
C
= 10 mA, I
B1
= I
B2
= 10 mA
PNP (Is=545.6E-18 Xti=3 Eg=1.11 Vaf=100 Bf=61.42 Ne=1.5 Ise=0 Ikf=50m Xtb=1.5 Br=1.426 Nc=2 Isc=0
Ikr=0 Rc=3.75 Cjc=2.77p Mjc=.1416 Vjc=.75 Fc=.5 Cje=2.65p Mje=.3083 Vje=.75 Tr=4.109n Tf=118.5p Itf=.5
Vtf=3 Xtf=6 Rb=10)
I
C
= 1.0 mA, V
CE
= 0.5 V
I
C
= 10 mA, V
CE
= 3.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
15
30
30
120
V
CE(sat)
Collector-Emitter Saturation Voltage
0.15
0.5
0.95
1.5
V
V
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
0.75
PNP Switching Transistor
(continued)
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