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參數(shù)資料
| 型號(hào)： | NESG2030M04-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SiGe HIGH FREQUENCY TRANSISTOR |
| 中文描述： | npn型硅鍺高頻晶體管 |
| 文件頁(yè)數(shù)： | 9/9頁(yè) |
| 文件大小： | 151K |
| 代理商： | NESG2030M04-T2 |
NESG2030M04
NESG2030M04 NONLINEAR MODEL
SCHEMATIC
EXCLUSIVE NORTH AMERICAN AGENT FOR
NEC
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Internet: http://WWW.CEL.COM
04/18/2002
Base
Emitter
Collector
L
BX
L
B
L
EX
L
E
L
CX
L
C
C
CBPKG
C
CB
C
CE
C
CEPKG
C
BEPKG
Parameters
C
CB
C
CE
L
B
L
C
L
E
C
CBPKG
C
CEPKG
C
BEPK
L
BX
L
CX
L
EX
NESG2030M04
0.07e-12
0.05e-12
0.9e-9
0.5e-9
0.14e-9
0.001e-12
0.2e-12
0.1e-12
0.2e-9
0.2e-9
0.1e-9
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
0.1 to 12 GHz
V
CE
= 0.5 V to 3 V, I
C
= 1 mA to 30 mA
12/2001
Parameters
Q1
Parameters
MJC
XCJC
CJS
VJS
MJS
FC
TF
XTF
VTF
ITF
PTF
TR
EG
XTB
XTI
KF
AF
Q1
0.16
1
0
0.75
0
0.5
3e-12
2
0.1
0.001
0
50e-12
1.11
0
3
120e-15
1.37
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RE
RB
RBM
IRB
RC
CJE
VJE
MJE
CJC
VJC
2.42e-13
382
1.025
87
100
5.2e-13
2.806
15.7
1.02
1.307
0.037
9e-14
2.194
2.2
4
1
0.007
4.2
0.4e-12
0.98
0.25
0.12e-12
0.63
(1) Gummel-Poon Model
BJT NONLINEAR MODEL PARAMETERS
(1)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NESG2030M04-T2-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M16 | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M16-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M16-T3-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2031M05 | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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