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參數(shù)資料
| 型號： | NESG2030M04-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SiGe HIGH FREQUENCY TRANSISTOR |
| 中文描述： | npn型硅鍺高頻晶體管 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 151K |
| 代理商： | NESG2030M04-T2 |
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
NESG2030M04
Collector Current, I
C
(mA)
N
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
Collector Current, l
C
(mA)
N
N
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
5
4
3
2
1
0
1
10
100
0
5
10
15
20
25
V
CE
= 2 V
f = 3 GHz
G
a
NF
5
4
3
2
1
0
1
10
100
0
5
10
15
20
25
V
CE
= 2 V
f = 4 GHz
G
a
NF
5
4
3
2
1
0
1
10
100
0
5
10
15
20
25
V
CE
= 2 V
f = 5 GHz
G
a
NF
A
A
A
A
A
A
Collector Current, I
C
(mA)
Collector Current, l
C
(mA)
N
N
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
5
4
3
2
1
0
1
10
100
0
5
10
15
20
25
V
CE
= 2 V
f = 2 GHz
G
a
NF
5
4
3
2
1
0
1
10
100
0
5
10
15
20
25
V
CE
= 2 V
f = 2.5 GHz
G
a
NF
A
A
A
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NESG2030M04-T2-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M16 | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M16-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M16-T3-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2031M05 | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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