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參數(shù)資料
| 型號： | NESG2030M04-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SiGe HIGH FREQUENCY TRANSISTOR |
| 中文描述： | npn型硅鍺高頻晶體管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 151K |
| 代理商： | NESG2030M04-T2 |
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy substrate
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T2
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
UNITS
V
V
V
mA
mW
RATINGS
8.0
2.3
1.2
35
80
T
J
Junction Temperature
°
C
150
T
STG
Storage Temperature
°
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
NESG2030M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
Collector Current, l
C
(mA)
D
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector to Emitter Voltage, V
CE
(V)
C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Frequency, f (GHz)
I
2
|
2
INSERTION POWER GAIN
vs. FREQUENCY
V
CE
= 2 V
I
C
= 20 mA
30
25
20
15
10
5
0
0.1
1
10
Collector Current, I
C
(mA)
G
T
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
40
35
30
25
20
15
10
5
0
0
10
100
V
CE
= 2 V
f = 2 GHz
SYMBOLS
R
th j-c
PARAMETERS
Junction to Case Resistance
UNITS
°
C/W
RATINGS
150
THERMAL RESISTANCE
40
35
30
25
20
15
10
5
0
0
1
2
3
100
μ
a
130
μ
a
40
μ
a
I
B
= 10
μ
a
160
μ
a
70
μ
a
190
μ
a
1000
100
10
100
10
1
0.1
V
CE
= 2 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NESG2030M04-T2-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M16 | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M16-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M16-T3-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2031M05 | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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