參數(shù)資料
型號(hào)： NESG2030M04-T2
廠商： NEC Corp.
英文描述： NPN SiGe HIGH FREQUENCY TRANSISTOR
中文描述： npn型硅鍺高頻晶體管
文件頁(yè)數(shù)： 8/9頁(yè)
文件大?。?/td> 151K
代理商： NESG2030M04-T2
FREQUENCY
GHz
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
8.00
9.00
10.00
11.00
12.00
S
11
S
21
S
12
S
22
MAG
1
(dB)
34.58
31.53
29.79
28.59
27.61
26.80
26.10
25.48
24.94
24.41
23.95
23.50
23.08
22.69
22.32
21.96
21.61
21.27
20.95
20.65
20.37
20.05
19.79
19.53
19.25
19.02
18.76
18.51
18.27
18.05
16.90
14.98
13.81
12.87
12.05
11.36
10.73
10.20
9.26
8.49
7.85
7.36
7.01
K
MAG
0.786
0.783
0.750
0.700
0.667
0.619
0.590
0.554
0.525
0.502
0.479
0.462
0.447
0.435
0.423
0.414
0.406
0.401
0.395
0.391
0.389
0.387
0.386
0.387
0.386
0.389
0.388
0.389
0.390
0.391
0.399
0.407
0.418
0.432
0.450
0.472
0.496
0.525
0.588
0.651
0.707
0.750
0.771
ANG
- 21.3
- 27.1
- 36.9
- 49.4
- 57.6
- 67.9
- 76.2
- 84.4
- 92.1
- 99.0
-106.4
-112.4
-119.0
-124.8
-130.5
-135.7
-141.2
-146.1
-150.8
-155.4
-160.0
-164.0
-168.0
-171.7
-175.4
-178.9
177.9
174.7
171.7
168.5
155.4
143.5
132.5
122.0
112.0
102.6
93.8
85.9
72.5
62.5
54.3
45.8
36.6
MAG
25.785
25.691
23.773
22.359
20.800
19.318
17.984
16.687
15.577
14.563
13.636
12.805
12.055
11.384
10.772
10.209
9.703
9.243
8.810
8.424
8.071
7.735
7.433
7.147
6.886
6.649
6.413
6.207
6.003
5.819
5.046
4.465
4.009
3.642
3.333
3.066
2.832
2.621
2.251
1.940
1.682
1.488
1.367
ANG
173.5
160.2
150.7
142.5
136.0
129.8
124.4
119.2
114.9
110.8
107.0
103.5
100.2
97.2
94.3
91.6
89.0
86.5
84.2
82.0
79.7
77.6
75.6
73.6
71.7
69.8
67.9
66.1
64.3
62.6
54.1
46.1
38.3
30.7
23.1
15.6
8.3
1.1
- 12.7
- 25.9
- 38.3
- 50.2
- 61.2
MAG
0.009
0.018
0.025
0.031
0.036
0.040
0.044
0.047
0.050
0.053
0.055
0.057
0.059
0.061
0.063
0.065
0.067
0.069
0.071
0.072
0.074
0.076
0.078
0.080
0.082
0.083
0.085
0.088
0.089
0.091
0.101
0.111
0.121
0.131
0.139
0.148
0.155
0.162
0.170
0.175
0.177
0.178
0.182
ANG
84.5
70.6
64.7
60.2
56.6
53.2
50.7
48.2
46.7
45.2
43.8
42.7
41.8
41.1
40.2
39.5
38.9
38.4
38.0
37.4
36.9
36.5
36.2
35.5
35.2
34.6
34.1
33.5
33.3
32.7
30.0
27.0
23.4
19.4
15.1
10.9
6.2
1.6
- 7.4
- 16.1
- 24.6
- 32.8
- 40.3
MAG
1.044
0.924
0.840
0.778
0.725
0.675
0.628
0.575
0.546
0.510
0.482
0.453
0.429
0.408
0.390
0.372
0.358
0.345
0.332
0.321
0.311
0.303
0.293
0.286
0.279
0.272
0.265
0.260
0.254
0.249
0.226
0.205
0.187
0.171
0.163
0.164
0.172
0.186
0.221
0.254
0.282
0.306
0.316
ANG
- 2.9
- 22.3
- 31.8
- 39.8
- 47.9
- 53.5
- 59.6
- 65.2
- 69.2
- 74.0
- 77.8
- 82.1
- 85.5
- 89.2
- 92.3
- 95.7
- 98.3
-101.5
-103.9
-106.7
-109.3
-111.8
-113.8
-116.1
-118.1
-120.2
-122.3
-124.1
-126.1
-127.7
-136.1
-143.5
-152.0
-161.7
-173.7
173.3
160.4
148.1
127.1
107.8
88.7
73.7
64.9
- 0.13
0.16
0.25
0.29
0.32
0.37
0.40
0.45
0.49
0.52
0.56
0.60
0.63
0.66
0.69
0.72
0.74
0.76
0.79
0.81
0.83
0.85
0.87
0.88
0.90
0.91
0.92
0.93
0.95
0.96
1.00
1.03
1.05
1.07
1.08
1.09
1.09
1.10
1.10
1.10
1.10
1.09
1.08
Note:
1. Gain Calculations:
NESG2030M04
V
DS
= 2 V, I
DS
= 20 mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NESG2030M04
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
j50
j10
-j10
j25
-j25
-j50
j100
-j100
Vc = 2.000 V, Ic = 20.000 mA
0.100 to 12.000GHz by 0.100
0
10
50
25
S
22
S
11
NESG2030M04
0.100 to 12.000GHz by 0.100
Vc = 2.000 V, Ic = 20.000 mA
NESG2030M04
-150°
-120°
-120°
-90°
-60°
-60°
-30°
+0°
+30°
+60°
+90°
+120°
+120°
+150°
+150°
+180°
S
21
S
12
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