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參數(shù)資料
| 型號： | NESG2031M05-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR |
| 中文描述： | 鄰舍npn型硅鍺高頻陳德良SIS的職權(quán)范圍 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 156K |
| 代理商： | NESG2031M05-T1 |
NESG2031M05
NEC's NPN SiGe
HIGH FREQUENCY TRAN SIS TOR
M05
DESCRIPTION
NEC's NESG2031M05 is fabricated using NECs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise ampli
fi
ers,
medium power ampli
fi
ers, and oscillators.
NEC s ow pro
fi
le,
fl
at lead style M05 Package provides high
frequency performance for compact wireless designs.
California Eastern Laboratories
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF
= 0.8 dBm at 2 GHz
NF
= 1.3 dBm at 5.2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG
= 21.5 dB at 2 GHz
LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
FEATURES
Notes:
1. MSG =
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is con nect ed to
the guard pin.
3. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
PART NUMBER NESG2031M05
PACKAGE OUTLINE M05
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
NF Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz, dB 1.3
Z
S
= Z
SOPT
, ZL = Z
LOPT
G
a
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz, dB 10.0
Z
S
= Z
SOPT
, ZL = Z
LOPT
NF Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, dB 0.8 1.1
Z
S
= Z
SOPT
, ZL = Z
LOPT
G
a
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, dB 15.0 17.0
R
S
= Z
SOPT
, ZL = Z
LOPT
MSG Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz dB 19.0 21.5
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz dB 16.0 18.0
P
1dB
Output Power at 1dB Compression Point at dBm 13
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
OIP
3
Output 3rd Order Intercept Point at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz dBm 23
f
T
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz GHz 20 25
C
re
Reverse Transfer Capacitance
2
at V
CB
= 2 V, I
C
= 0 mA, f = 1 GHz pF 0.15 0.25
I
CBO
Collector Cutoff Current at V
CB
= 5V, I
E
= 0 nA 100
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0 nA 100
h
FE
DC Current Gain
3
at V
CE
= 2 V, I
C
= 5 mA 130 190 260
S
21
S
12
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
D
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| NESG204619-T1-A | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
| NESG2101M16 | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NESG2031M05-T1-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| NESG2031M16 | 功能描述:射頻硅鍺晶體管 RO 551-NESG2031M16-A RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| NESG2031M16-A | 功能描述:射頻硅鍺晶體管 NPN High Frequency RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| NESG2031M16-T3 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT NPN 5V 0.035A 6-Pin LeadLess Mini-Mold T/R |
| NESG2031M16-T3-A | 功能描述:射頻硅鍺晶體管 NPN High Frequency RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
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