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參數(shù)資料
| 型號(hào)： | NESG2030M04-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SiGe HIGH FREQUENCY TRANSISTOR |
| 中文描述： | npn型硅鍺高頻晶體管 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 151K |
| 代理商： | NESG2030M04-T2 |
NESG2030M04
NPN SiGe HIGH FREQUENCY TRANSISTOR
M04
DESCRIPTION
The NESG2030M04 is fabricated using NEC's state-of-the-art
SiGe, wafer process. With a typical transition frequency of
60 GHz the NESG2030M04 is usable in applications from 100
MHz to over 10 GHz. Maximum DC current input of 35 mA
provides a device with a usable current range of 250
μ
A to 25
mA. The NESG2030M04 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NESG2030M04 is
an ideal choice for LNA and oscillator requirements in all
mobile communication systems.
California Eastern Laboratories
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
NESG2030M04
2SC5761
M04
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE
C
re
NF
G
a
MSG
|S
21E
|
2
P
1dB
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 0.5 V, I
C
= 0
DC Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
Reverse Transfer Capacitance
3
at V
CB
= 2 V, I
E
= 0 mA, f = 1 GHz
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
IN
= Z
OPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
OPT
Maximum Stable Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Output Power at 1 dB compression point
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Third Order Intercept Point, V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
nA
nA
200
200
400
0.22
1.1
200
pF
dB
GHz
dB
dB
dBm
0.17
0.9
16
20
18
12
18
16
OIP
3
dBm
22
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
S
21
S
12
4. MSG =
D
R
SiGe TECHNOLOGY:
f
T
= 60 GHz Process
LOW NOISE FIGURE:
NF
= 0.9 dBm at 2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG
= 20 dB at 2 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
FEATURES
PART NUMBER QUANTITY
NESG2030M04
NESG2030M04-T2
50 pcs(non reel)
3 kpcs/reel
ORDERING INFORMATION
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NESG2030M04-T2-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M16 | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M16-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M16-T3-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2031M05 | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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