參數(shù)資料
型號: NESG2030M04-T2
廠商: NEC Corp.
英文描述: NPN SiGe HIGH FREQUENCY TRANSISTOR
中文描述: npn型硅鍺高頻晶體管
文件頁數(shù): 3/9頁
文件大?。?/td> 151K
代理商: NESG2030M04-T2
NESG2030M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
Collector Current, I
C
(mA)
M
I
2
I
2
MAXIMUM STABLE GAIN,
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
V
CE
= 2 V
f = 1 GHz
30
25
20
15
10
5
0
1
10
100
MSG
|S
21e
|
2
Collector Current, I
C
(mA)
M
I
2
I
2
MAXIMUM STABLE GAIN,
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
V
CE
= 2 V
f = 2 GHz
30
25
20
15
10
5
0
1
10
100
MSG
|S
21e
|
2
Input Power, P
in
(V)
O
o
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
P
out
I
C
V
CE
= 2 V, f = GHz
I
cq
= 5 mA(RF OFF)
25
20
15
10
5
0
-5
-10
-15
-20
-15
-10
-5
0
5
80
70
60
50
40
30
20
10
0
Collector Current, I
C
(mA)
N
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
5
4
3
2
1
0
1
10
100
0
5
10
15
20
25
V
CE
= 2 V
f = 1.5 GHz
G
a
NF
A
A
V
CE
= 2 V
f = 5 GHz
30
25
20
15
10
5
0
1
10
100
MAG
|S
21e
|
2
MAXIMUM AVAILABLE GAIN,
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
I
2
I
2
M
V
CE
= 2 V
I
cq
= 5 mA
f = 2 GHz
offset = 1 MHz
70
60
50
40
30
20
10
0
-5
0
5
10
15
20
Collector Current, I
C
(mA)
C
C
Output Power (each tone), P
out
(mA)
T
THIRD ORDER INTERMODULATION
DISTORTION
vs. OUTPUT POWER
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