參數(shù)資料
型號: NESG2030M04-T2
廠商: NEC Corp.
英文描述: NPN SiGe HIGH FREQUENCY TRANSISTOR
中文描述: npn型硅鍺高頻晶體管
文件頁數(shù): 6/9頁
文件大?。?/td> 151K
代理商: NESG2030M04-T2
NESG2030M04
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
j50
FREQUENCY
GHz
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
8.00
9.00
10.00
11.00
12.00
S
11
S
21
S
12
S
22
MAG
1
(dB)
30.33
27.67
25.95
24.77
23.89
23.14
22.51
21.98
21.49
21.07
20.65
20.31
19.97
19.65
19.36
19.08
18.82
18.58
18.33
18.12
17.92
17.70
17.50
17.29
17.11
16.95
16.76
16.59
16.42
16.27
15.52
14.85
13.45
12.05
11.07
10.30
9.60
9.05
8.09
7.32
6.69
6.26
6.00
K
MAG
0.880
0.917
0.912
0.884
0.870
0.832
0.815
0.785
0.755
0.734
0.703
0.685
0.663
0.644
0.625
0.608
0.590
0.577
0.565
0.552
0.543
0.533
0.526
0.521
0.514
0.511
0.507
0.504
0.502
0.498
0.495
0.496
0.502
0.512
0.526
0.544
0.564
0.590
0.645
0.700
0.751
0.789
0.809
ANG
- 15.9
- 16.4
- 22.9
- 31.7
- 37.6
- 45.4
- 52.2
- 59.0
- 65.4
- 71.6
- 77.9
- 83.7
- 89.9
- 95.4
-100.9
-106.1
-111.5
-116.7
-121.4
-126.2
-131.2
-135.6
-140.1
-144.3
-148.5
-152.6
-156.5
-160.3
-163.7
-167.6
176.3
161.7
148.2
135.5
123.3
112.1
101.8
92.5
76.9
65.4
55.9
46.7
37.0
MAG
11.079
11.423
10.960
10.799
10.505
10.169
9.830
9.524
9.156
8.829
8.446
8.165
7.848
7.554
7.255
6.959
6.714
6.482
6.206
5.992
5.811
5.598
5.404
5.214
5.052
4.901
4.748
4.607
4.463
4.358
3.814
3.399
3.067
2.802
2.577
2.380
2.198
2.036
1.746
1.499
1.293
1.141
1.040
ANG
176.4
166.9
160.1
153.7
148.6
143.2
138.3
133.2
128.9
124.6
120.6
116.5
112.8
109.3
105.9
102.6
99.5
96.5
93.7
90.9
88.1
85.6
83.2
80.8
78.4
76.1
73.8
71.8
69.6
67.5
57.7
48.6
39.8
31.3
22.9
14.8
6.7
- 1.1
- 16.1
- 30.0
- 43.0
- 55.2
- 66.6
MAG
0.010
0.020
0.028
0.036
0.043
0.049
0.055
0.060
0.065
0.069
0.073
0.076
0.079
0.082
0.084
0.086
0.088
0.090
0.091
0.092
0.094
0.095
0.096
0.097
0.098
0.099
0.100
0.101
0.102
0.103
0.107
0.111
0.116
0.121
0.125
0.130
0.134
0.139
0.144
0.149
0.151
0.155
0.163
ANG
81.3
76.8
71.1
66.4
62.5
58.6
55.2
51.6
48.9
46.2
43.6
41.2
38.9
36.9
35.0
33.2
31.6
30.1
28.7
27.4
26.0
25.0
23.9
22.9
22.0
21.1
20.3
19.4
18.7
18.0
14.8
12.0
9.5
7.1
4.3
1.7
- 1.4
- 4.5
- 10.7
- 16.8
- 23.1
- 29.3
- 35.4
MAG
1.072
0.972
0.917
0.884
0.848
0.820
0.784
0.742
0.721
0.686
0.663
0.631
0.606
0.582
0.560
0.538
0.521
0.502
0.486
0.470
0.454
0.442
0.429
0.418
0.407
0.398
0.386
0.378
0.369
0.361
0.327
0.298
0.273
0.249
0.226
0.206
0.192
0.183
0.179
0.185
0.190
0.205
0.228
ANG
1.2
- 13.5
- 19.9
- 24.8
- 30.7
- 34.6
- 39.2
- 43.4
- 46.7
- 50.5
- 53.6
- 57.1
- 59.8
- 62.9
- 65.5
- 68.1
- 70.5
- 72.9
- 74.8
- 77.0
- 79.2
- 81.1
- 82.4
- 84.3
- 85.7
- 87.2
- 88.8
- 90.1
- 91.4
- 92.9
- 98.3
-102.6
-107.0
-111.5
-117.7
-125.8
-135.4
-147.1
-172.0
163.7
141.0
121.6
111.6
NESG2030M04
V
C
= 2 V, I
C
= 5 mA
- 0.13
0.08
0.14
0.17
0.18
0.21
0.23
0.26
0.29
0.31
0.34
0.36
0.39
0.41
0.44
0.46
0.49
0.51
0.54
0.56
0.58
0.61
0.63
0.65
0.68
0.70
0.72
0.74
0.76
0.78
0.87
0.95
1.02
1.07
1.11
1.15
1.18
1.19
1.21
1.20
1.19
1.16
1.11
Note:
1. Gain Calculations:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
j10
-j10
j25
-j25
-j50
j100
-j100
Vc = 2.000 V, Ic = 5.000 mA
0.100 to 12.000GHz by 0.100
NESG2030M04
S
22
10
0
50
25
0.100 to 12.000GHz by 0.100
Vc = 2.000 V, Ic = 5.000 mA
NESG2030M04
-150°
-120°
-90°
-60°
-30°
+0°
+30°
+60°
+90°
+120°
+150°
+180°
S
12
S
21
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