參數(shù)資料
型號： NESG2030M04-T2
廠商： NEC Corp.
英文描述： NPN SiGe HIGH FREQUENCY TRANSISTOR
中文描述： npn型硅鍺高頻晶體管
文件頁數(shù)： 7/9頁
文件大?。?/td> 151K
代理商： NESG2030M04-T2
NESG2030M04
FREQUENCY
GHz
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
8.00
9.00
10.00
11.00
12.00
S
11
S
21
S
12
S
22
MAG
1
(dB)
32.56
29.85
28.15
26.93
26.01
25.26
24.57
24.01
23.51
23.03
22.59
22.20
21.83
21.47
21.14
20.82
20.52
20.25
19.95
19.68
19.45
19.19
18.95
18.71
18.48
18.26
18.06
17.85
17.64
17.43
16.51
15.19
13.59
12.56
11.69
10.97
10.32
9.78
8.83
8.07
7.43
6.97
6.66
K
MAG
0.843
0.861
0.842
0.802
0.776
0.730
0.704
0.667
0.635
0.610
0.581
0.561
0.541
0.524
0.508
0.494
0.481
0.471
0.462
0.453
0.448
0.442
0.439
0.437
0.433
0.434
0.431
0.431
0.430
0.430
0.434
0.439
0.448
0.462
0.478
0.498
0.521
0.549
0.609
0.670
0.724
0.765
0.786
ANG
- 18.3
- 21.3
- 29.5
- 40.1
- 47.3
- 56.4
- 64.0
- 71.6
- 78.8
- 85.4
- 92.3
- 98.2
-104.7
-110.4
-116.0
-121.3
-126.8
-132.0
-136.7
-141.5
-146.3
-150.6
-154.8
-158.9
-162.8
-166.7
-170.3
-173.8
-177.0
179.5
164.9
151.7
139.5
128.0
117.0
106.8
97.3
88.8
74.5
63.9
55.1
46.3
36.9
MAG
17.945
18.266
17.254
16.649
15.854
15.040
14.268
13.490
12.769
12.100
11.435
10.861
10.311
9.810
9.335
8.887
8.494
8.130
7.765
7.450
7.166
6.881
6.624
6.378
6.156
5.954
5.751
5.571
5.391
5.238
4.558
4.043
3.636
3.310
3.034
2.795
2.582
2.391
2.052
1.767
1.530
1.352
1.238
ANG
175.1
163.8
155.5
148.2
142.3
136.3
131.0
125.7
121.3
117.0
113.0
109.2
105.7
102.4
99.3
96.3
93.4
90.7
88.2
85.7
83.2
80.9
78.7
76.5
74.4
72.4
70.3
68.4
66.5
64.6
55.6
47.1
38.9
30.9
23.0
15.3
7.7
0.2
- 14.1
- 27.6
- 40.3
- 52.4
- 63.6
MAG
0.010
0.019
0.026
0.034
0.040
0.045
0.050
0.054
0.057
0.060
0.063
0.065
0.068
0.070
0.072
0.074
0.075
0.077
0.079
0.080
0.081
0.083
0.084
0.086
0.087
0.089
0.090
0.091
0.093
0.095
0.102
0.110
0.117
0.125
0.133
0.140
0.147
0.152
0.160
0.164
0.167
0.169
0.174
ANG
82.5
73.7
67.8
63.3
58.8
55.3
52.3
49.3
46.6
44.6
42.6
41.0
39.4
38.0
36.7
35.5
34.6
33.7
32.7
32.0
31.3
30.6
29.9
29.2
28.8
28.1
27.6
27.2
26.6
26.2
23.4
21.0
18.0
14.7
11.1
7.4
3.5
- 0.5
- 8.7
- 16.5
- 24.1
- 31.6
- 38.7
MAG
1.060
0.951
0.882
0.835
0.790
0.749
0.706
0.656
0.629
0.591
0.563
0.532
0.506
0.482
0.461
0.440
0.424
0.407
0.392
0.378
0.365
0.354
0.343
0.333
0.323
0.316
0.306
0.300
0.291
0.285
0.255
0.229
0.206
0.184
0.167
0.155
0.152
0.155
0.175
0.199
0.218
0.240
0.253
ANG
- 0.7
- 17.8
- 25.7
- 32.1
- 39.3
- 44.1
- 49.5
- 54.5
- 58.3
- 62.6
- 66.1
- 70.0
- 73.1
- 76.5
- 79.3
- 82.3
- 84.8
- 87.6
- 89.7
- 92.2
- 94.6
- 96.8
- 98.4
-100.6
-102.1
-103.9
-105.9
-107.3
-109.1
-110.5
-117.4
-123.2
-129.4
-136.6
-146.4
-158.5
-172.3
173.5
147.8
125.4
104.0
87.7
79.4
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
NESG2030M04
Note:
1. Gain Calculations:
NESG2030M04
V
DS
= 2 V, I
DS
= 10 mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
- 0.11
0.12
0.19
0.22
0.25
0.28
0.31
0.35
0.38
0.41
0.45
0.48
0.51
0.54
0.57
0.60
0.62
0.65
0.67
0.70
0.72
0.75
0.77
0.79
0.81
0.82
0.84
0.86
0.88
0.89
0.96
1.01
1.05
1.07
1.10
1.11
1.12
1.13
1.14
1.14
1.13
1.12
1.09
j10
-j10
j25
-j25
j50
-j50
j100
-j100
Vc = 2.000 V, Ic = 10.000 mA
0.100 to 12.000GHz by 0.100
S
22
S
11
10
0
50
25
0.100 to 12.000GHz by 0.100
Vc = 2.000 V, Ic = 10.000 mA
NESG2030M04
-150°
-120°
-90°
-60°
-30°
+0°
+30°
+60°
+90°
+120°
+150°
+180°
S
12
S
21
相關(guān)PDF資料
PDF描述
NESG2031M05 NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
NESG2031M05-T1 NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
NESG204619 NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
NESG204619-A NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
NESG204619-T1-A NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NESG2030M04-T2-A 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel
NESG2030M16 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel
NESG2030M16-A 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel
NESG2030M16-T3-A 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel
NESG2031M05 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*