參數(shù)資料
型號(hào): NDS9958
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N & P-Channel Enhancement Mode Field Effect Transistor
中文描述: 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 7/12頁(yè)
文件大小: 360K
代理商: NDS9958
NDS9958.SAM
-50
-25
0
25
50
75
100
125
150
0.95
1
1.05
1.1
T , JUNCTION TEMPERATURE (°C)
D
I = -250μA
B
D
0.3
0.6
-V , BODY DIODE FORWARD VOLTAGE (V)
0.9
1.2
1.5
1.8
0.001
0.01
0.1
0.5
1
5
10
-
TJ
25°C
-55°C
V = 0V
S
0.1
0.2
0.5
1
2
5
10
20
100
200
300
500
1000
1500
-V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
Figure 18. Breakdown Voltage Variation with
Temperature.
Figure 19. Body Diode Forward Voltage
Variation with Current and Temperature
Figure 20. Capacitance Characteristics.
Typical Electrical Characteristics
:
P-Channel
(continued)
0
5
10
15
20
-10
-8
-6
-4
-2
0
Q , GATE CHARGE (nC)
V
G
I = -3.5A
V = -5V
-10V
-15V
Figure 21. Gate Charge Characteristics
Figure 22. Transconductance Variation with Drain
Current and Temperature.
-15
-12
-9
-6
-3
0
0
2
4
6
8
I , DRAIN CURRENT (A)
g
TJ
25°C
125°C
V = -15V
F
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