參數(shù)資料
型號(hào)： NDS9958
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N & P-Channel Enhancement Mode Field Effect Transistor
中文描述： 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 360K
代理商： NDS9958
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
N-Ch
20
V
V
GS
= 0 V, I
D
= -250 μA
V
DS
= 16 V, V
GS
= 0 V
P-Ch
-20
I
DSS
Zero Gate Voltage Drain Current
N-Ch
1
μA
T
J
= 70°C
5
μA
V
DS
= -16 V, V
GS
= 0 V
P-Ch
-1
μA
T
J
= 70°C
-5
μA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
All
100
nA
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
All
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
N-Ch
1
1.5
3
V
T
J
= 125°C
0.7
1.1
2.2
V
DS
= V
GS
, I
D
= -250 μA
P-Ch
-1
-2.2
-3
T
J
= 125°C
-0.8
-1.9
-2.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 3.5 A
N-Ch
0.062
0.1
T
J
= 125°C
0.085
0.14
V
GS
= -10 V, I
D
= -3.5 A
P-Ch
0.08
0.1
T
J
= 125°C
0.11
0.16
V
GS
= 6V, I
D
= 3.0 A
V
GS
= -6 V, I
D
= -3.0 A
V
GS
= 4.5 V, I
D
= 1.0 A
V
GS
= -4.5 V, I
D
= -1.0 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= -10 V, V
DS
= -5 V
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= 15 V, I
D
= 3.5 A
V
DS
= -15 V, I
D
= -3.5 A
N-Ch
0.073
0.12
P-Ch
0.112
0.12
N-Ch
0.08
0.15
P-Ch
0.165
0.19
I
D(on)
On-State Drain Current
N-Ch
14
A
P-Ch
-14
N-Ch
3.5
P-Ch
-2.5
g
FS
Forward Transconductance
N-Ch
7
S
P-Ch
5
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
V
= 10V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
525
pF
P-Ch
785
C
oss
Output Capacitance
N-Ch
315
pF
P-Ch
500
C
rss
Reverse Transfer Capacitance
N-Ch
185
pF
P-Ch
245
NDS9958.SAM
相關(guān)PDF資料
PDF描述
NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor（2.0A，50V，0.3Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.0A, 漏源電壓50V，導(dǎo)通電阻0.3Ω）)
NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.8A，60V，0.2Ω）(N溝道邏輯增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.8A, 漏源電壓60V，導(dǎo)通電阻0.2Ω）)
NDT014 N-Channel Enhancement Mode Field Effect Transistor（2.7A，60V，0.2Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.7A, 漏源電壓60V，導(dǎo)通電阻0.2Ω）)
NDT014(J23Z) TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223
NDT2955 P-Channel Enhancement Mode Field Effect Transistor（-2.5A，-60V，0.3Ω）(P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.5A, 漏源電壓-60V，導(dǎo)通電阻0.3Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS9959 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9959 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS9959_Q 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDSC1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.0mm 4 Pin Ceramic Surface Mount Crystal
NDSC3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.0mm 4 Pin Ceramic Surface Mount Crystal
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