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參數(shù)資料
| 型號： | NDS9958 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 360K |
| 代理商： | NDS9958 |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
N-Channel
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
P-Channel
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
N-Ch
6
10
ns
P-Ch
9
40
t
r
Turn - On Rise Time
N-Ch
12
25
ns
P-Ch
17
25
t
D(off)
Turn - Off Delay Time
N-Ch
22
30
ns
P-Ch
26
30
t
f
Turn - Off Fall Time
N-Ch
8
20
ns
P-Ch
13
20
Q
g
Total Gate Charge
N-Channel
V
= 10 V,
I
D
= 3.5 A, V
GS
= 10 V
P-Channel
V
= -10 V,
I
D
= -3.5 A, V
GS
= -10 V
N-Ch
17
30
nC
P-Ch
19
30
Q
gs
Gate-Source Charge
N-Ch
1.2
6
nC
P-Ch
3
6
Q
gd
Gate-Drain Charge
N-Ch
5
12
nC
P-Ch
9
12
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
1.7
A
P-Ch
-1.7
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.7 A
(Note 2)
V
GS
= 0 V, I
S
= -1.7 A
(Note 2)
V
GS
= 0V, I
F
= 3.5 A, dI
F
/ dt = 100 A/μs
N-Ch
0.86
1.2
V
P-Ch
-0.9
-1.2
t
rr
Reverse Recovery Time
N-Ch
100
ns
P-Ch
100
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
)×
R
DS
(
ON
)
T
J
Typical R
θ
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78
o
C/W when mounted on a 0.5 in
2
pad of 2oz cpper.
b. 125
o
C/W when mounted on a 0.02 in
2
pad of 2oz cpper.
c. 135
o
C/W when mounted on a 0.003 in
2
pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDS9958.SAM
1a
1b
1c
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| NDT014(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223 |
| NDT2955 | P-Channel Enhancement Mode Field Effect Transistor（-2.5A，-60V，0.3Ω）(P溝道增強型場效應(yīng)管（漏電流-2.5A, 漏源電壓-60V，導(dǎo)通電阻0.3Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS9959 | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9959 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS9959_Q | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDSC1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.0mm 4 Pin Ceramic Surface Mount Crystal |
| NDSC3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.0mm 4 Pin Ceramic Surface Mount Crystal |
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