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參數(shù)資料
| 型號(hào)： | NDS9958 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 360K |
| 代理商： | NDS9958 |
February 1996
NDS9958
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
N-Channel
P-Channel
Units
V
DSS
Drain-Source Voltage
20
-20
V
V
GSS
Gate-Source Voltage
± 20
± 20
V
I
D
Drain Current - Continuous T
A
= 25°C
(Note 1a)
± 3.5
± 3.5
A
- Continuous T
A
= 70°C
(Note 1a)
- Pulsed T
A
= 25°C
± 2.8
± 2.8
± 14
± 14
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDS9958.SAM
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management, Half bridge motor
control, cellular phone, and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
N-Channel 3.5A, 20V, R
DS(ON)
= 0.1
@ V
GS
= 10V.
P-Channel -3.5A , -20V, R
DS(ON)
= 0.1
@ V
GS
= -10V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
1
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6
7
8
4
3
2
1997 Fairchild Semiconductor Corporation
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| NDT014(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223 |
| NDT2955 | P-Channel Enhancement Mode Field Effect Transistor（-2.5A，-60V，0.3Ω）(P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.5A, 漏源電壓-60V，導(dǎo)通電阻0.3Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS9959 | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9959 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS9959_Q | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDSC1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.0mm 4 Pin Ceramic Surface Mount Crystal |
| NDSC3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.0mm 4 Pin Ceramic Surface Mount Crystal |
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