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參數(shù)資料
| 型號： | NDT014L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.8A，60V，0.2Ω）(N溝道邏輯增強型場效應(yīng)管（漏電流2.8A, 漏源電壓60V，導通電阻0.2Ω）) |
| 中文描述： | 2.8 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 229K |
| 代理商： | NDT014L |
August 1996
NDT014L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology.This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes.Thesedevices are particularly suited for low voltage
applications such as DC motor control and DC/DC
conversion where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
_________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDT014L
Units
V
DSS
Drain-Source Voltage
60
V
V
GSS
Gate-Source Voltage
± 20
V
I
D
Drain Current
- Continuous
(Note 1a)
± 2.8
A
- Pulsed
± 10
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
NDT014L Rev.D
2.8 A, 60 V. R
DS(ON)
= 0.2
@ V
GS
= 4.5 V
R
DS(ON)
= 0.16
@ V
GS
= 10 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
D
D
S
G
D
S
G
1997 Fairchild Semiconductor Corporation
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