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參數(shù)資料
| 型號(hào)： | NDT014L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.8A，60V，0.2Ω）(N溝道邏輯增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.8A, 漏源電壓60V，導(dǎo)通電阻0.2Ω）) |
| 中文描述： | 2.8 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 229K |
| 代理商： | NDT014L |
NDT014L Rev.D
Typical Thermal Characteristics
0
2
4
6
8
10
0
2
4
6
8
I , DRAIN CURRENT (A)
g
J
F
V = 5V
125°C
25°C
Figure 13. Transconductance Variation with Drain
Current and Temperature.
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
3
3.5
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
Figure 14. SOT-223 Maximum Steady- State
Power Dissipation versus Copper
Mounting Pad Area.
Figure 17. Typical Transient Thermal Impedance Curve
.
Remark: Thermal characterization performed under the conditions of Note 1c. Should better thermal design employs, R
θ
JA
will be
lower and reach thermal equivalent sooner.
Figure 16. Maximum Safe Operating Area
.
0
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
2oz COPPER MOUNTING PAD AREA (in )
I
D
2
1c
1b
1a
4 .5"x5" FR-4 Board
T = 25 C
Still Air
V = 4.5V
o
0.1
0.5
1
2
5
10
30
50
80
0.01
0.05
0.1
0.5
1
5
10
20
V , DRAIN-SOURCE VOLTAGE (V)
I
D
DC
1s
10s
10ms
100ms
RDS(ON)LMT
V = 4.5V
SINGLE PULSE
R =See Note1c
T = 25°C
10us
100us
Figure 15. Maximum Steady- State Drain
Current versus Copper Mounting Pad
Area.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R JA
R JA
T - T = P * R (t)
P(pk)
t
1
t
2
相關(guān)PDF資料 |
PDF描述 |
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| NDT014 | N-Channel Enhancement Mode Field Effect Transistor（2.7A，60V，0.2Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.7A, 漏源電壓60V，導(dǎo)通電阻0.2Ω）) |
| NDT014(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223 |
| NDT2955 | P-Channel Enhancement Mode Field Effect Transistor（-2.5A，-60V，0.3Ω）(P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.5A, 漏源電壓-60V，導(dǎo)通電阻0.3Ω）) |
| NDT2955(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 |
| NDT3055L | N-Channel Logic Level Enhancement Mode Field Effect Transistor（4A，60V，0.1Ω）(N溝道邏輯增強(qiáng)型場(chǎng)效應(yīng)管（漏電流4A, 漏源電壓60V，導(dǎo)通電阻0.1Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT014L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| NDT014L_SB9D008 | 制造商:Fairchild Semiconductor Corporation 功能描述:N channel MOSFET |
| NDT01N60 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:N-Channel Power MOSFET 600 V, 8.5 |
| NDT01N60T1G | 制造商:ON Semiconductor 功能描述:NFET SOT223 600V 0.4A 65M - Tape and Reel 制造商:ON Semiconductor 功能描述:NFET SOT223 600V 0.4A 65M - Cut TR (SOS) 制造商:ON Semiconductor 功能描述:REEL / NFET SOT223 600V 0.4A 65M |
| NDT-03B | 制造商:Star Micronics 功能描述:SPEAKER, 15MMX15MM, 8 OHM, 500mW, Transducer Function:Speaker, Power Rating RMS: |
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