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參數(shù)資料
| 型號： | NDT014L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.8A，60V，0.2Ω）(N溝道邏輯增強(qiáng)型場效應(yīng)管（漏電流2.8A, 漏源電壓60V，導(dǎo)通電阻0.2Ω）) |
| 中文描述： | 2.8 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 229K |
| 代理商： | NDT014L |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 60 V, V
GS
= 0 V
60
V
Zero Gate Voltage Drain Current
25
μA
T
J
= 55°C
250
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.5
3
V
T
J
= 125°C
0.8
1.1
2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 2.8 A
0.17
0.2
T
J
= 125°C
0.22
0.36
V
GS
= 10 V, I
D
= 3.4 A
V
GS
= 4.5 V , V
DS
= 5 V
V
GS
= 10 V, V
DS
= 5 V
V
GS
= 5 V, I
D
= 2.8 A
0.12
0.16
I
D(on)
On-State Drain Current
5
A
10
G
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
4.2
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 30 V, V
GS
= 0 V,
f = 1.0 MHz
214
pF
Output Capacitance
70
pF
Reverse Transfer Capacitance
27
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 30 V, I
D
= 3 A,
V
GEN
= 10 V, R
GEN
= 12
6
12
ns
Turn - On Rise Time
14
25
ns
Turn - Off Delay Time
15
28
ns
Turn - Off Fall Time
10
18
ns
Total Gate Charge
V
= 10 V,
I
D
= 2.8 A, V
GS
= 4.5 V
3.6
5
nC
Gate-Source Charge
0.8
nC
Gate-Drain Charge
1.4
nC
NDT014L Rev.D
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|---|---|
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