參數(shù)資料
型號(hào)： MX28F160C3BXAC-90
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝： 8 X 6 MM, 1.20 MM HEIGHT, 0.75 MM PITCH, MO-207, CSP-48
文件頁(yè)數(shù)： 8/44頁(yè)
文件大?。?/td> 429K
代理商： MX28F160C3BXAC-90
8
P/N:PM0867
MX28F160C3T/B
REV. 1.2, MAR. 17, 2004
2 PRINCIPLES OF OPERATION
The product includes an on-chip WSM to manage sec-
tor erase, word write and lock-bit configuration functions.
After initial device power-up or return from reset mode
(see section on Bus Operations), the device defaults to
read array mode. Manipulation of external memory con-
trol pins allow array read, standby and output disable
operations.
Status register and identifier codes can be accessed
through the CUI independent of the VPP voltage. All
functions associated with altering memory contents -
sector erase, word write, sector lock/unlock, status and
identifier codes - are accessed via the CUI and verified
through the status register.
Commands are written using standard microprocessor
write timings. The CUI contents serve as input to the
WSM, which controls the sector erase, word write and
sector lock/unlock. The internal algorithms are regulated
by the WSM, including pulse repetition, internal verifica-
tion and margining of data. Addresses and data are in-
ternally latched during write cycles. Address is latched
at falling edge of CE and data latched at rising edge of
WE. Writing the appropriate command outputs array data,
accesses the identifier codes or outputs status register
data.
Interface software that initiates and polls progress of
sector erase, word write and sector lock/unlock can be
stored in any sector. This code is copied to and executed
from system RAM during flash memory updates. After
successful completion, reads are again possible via the
Read Array command. Sector erase suspend allows
system software to suspend a sector erase to read/write
data from/to sectors other than that which is suspend.
Word write suspend allows system software to suspend
a word write to read data from any other flash memory
array location.
With the mechanism of sector lock, memory contents
cannot be altered due to noise or unwanted operation.
When RP=VIH and VCC<VLKO (lockout voltage), any
data write alteration can be failure. During read opera-
tion, if write VPP voltage is below VPPLK, then hard-
ware level data protection is achieved. With CUI's two-
step command sequence sector erase, word write or
sector lock/unlock, software level data protection is
achieved also.
3 BUS OPERATION
The local CPU reads and writes flash memory in-sys-
tem. All bus cycles to or from the flash memory conform
to standard microprocessor bus cycles.
3.1 Read
Information can be read from any sector, configuration
codes or status register independent of the VPP volt-
age. RP can be at VIH.
The first task is to write the appropriate read mode com-
mand (Read Array, Read Configuration, Read Query or
Read Status Register) to the CUI. Upon initial device
power-up or after exit from reset, the device automati-
cally resets to read array mode. In order to read data,
control pins set for CE, OE, WE, RP and WP must be
driven to active. CE and OE must be active to obtain
data at the outputs. CE is the device selection control.
OE is the data output (DQ0-DQ15) control and active
drives the selected memory data onto the I/O bus, WE
must be VIH, RP must be VIH, WP must be at VIL or
VIH.
3.2 Output Disable
With OE at a logic-high level (VIH), the device outputs
are disabled. Output pins (DQ0-DQ15) are placed in a
high-impedance state.
3.3 Standby
CE at a logic-high level (VIH) places the device in
standby mode which substantially reduces device power
consumption. DQ0~DQ15 outputs are placed in a high-
impedance state independent of OE. If deselected dur-
ing sector erase, word write or sector lock/unlock, the
device continues functioning, and consuming active
power until the operation completes.
3.4 Reset
As RP=VIL, it initiates the reset mode. The device en-
ters reset/deep power down mode. However, the data
stored in the memory has to be sustained at least 100ns
in the read mode before the device becomes deselected
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