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參數(shù)資料
| 型號： | MX28F160C3BXAC-90 |
| 廠商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分類： | DRAM |
| 英文描述： | 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 中文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| 封裝： | 8 X 6 MM, 1.20 MM HEIGHT, 0.75 MM PITCH, MO-207, CSP-48 |
| 文件頁數(shù)： | 26/44頁 |
| 文件大小： | 429K |
| 代理商： | MX28F160C3BXAC-90 |
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26
P/N:PM0867
MX28F160C3T/B
REV. 1.2, MAR. 17, 2004
AC Characteristic -- Under Reset Operation
Sym.
Parameter
VCC=2.7V~3.6V
Min.
100
Unit
Notes
Max.
tPLPH
RP Low to Reset during Read
(If RP is tied to VCC, this specification is not applicable)
RP Low to Reset during Sector Erase
RP Low to Reset during Program
ns
1,3
tPLRH1
tPLRH2
22
12
us
us
1,4
1,4
Notes:
1. See Section 3.4 for a full description of these conditions.
2. If tPLPH is < 100ns the device may still reset but this is not guaranteed.
3. If RP is asserted while a sector erase or word program operation is not executing, the reset will complete within
100ns.
4. Sampled, but not 100% tested.
Figure 5. RESET WAVEFORM
tPLPH
tPLRH
Abort
Complete
tPHQV
tPHWL
tPHEL
tPHQV
tPHWL
tPHEL
VIH
VIL
RP (P)
(A) Reset during Read Mode
tPLPH
VIH
VIL
RP (P)
(B) Reset during Program or Sector Erase, tPLPH < tPLRH
tPLRH
Abort
Complete
Deep
Power-
Down
tPHQV
tPHWL
tPHEL
tPLPH
VIH
VIL
RP (P)
(C) Reset Program or Sector Erase, tPLPH > tPLRH
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX28F160C3BXAC-90G | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F160C3BXAI-11 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F160C3BXAI-11G | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F160C3BXAI-70 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F160C3BXAI-70G | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
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