參數(shù)資料
型號(hào)： MX28F160C3BXAC-90
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝： 8 X 6 MM, 1.20 MM HEIGHT, 0.75 MM PITCH, MO-207, CSP-48
文件頁(yè)數(shù)： 2/44頁(yè)
文件大?。?/td> 429K
代理商： MX28F160C3BXAC-90
2
P/N:PM0867
MX28F160C3T/B
REV. 1.2, MAR. 17, 2004
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX28F160C3T/B uses a 2.7V~3.6V VCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
The dedicated VPP pin gives complete data protection
when VPP< VPPLK.
A Command User Interface (CUI) serves as the inter-
face between the system processor and internal opera-
tion of the device. A valid command sequence written to
the CUI initiates device automation. An internal Write
State Machine (WSM) automatically executes the algo-
rithms and timings necessary for erase, word write and
sector lock/unlock configuration operations.
A sector erase operation erases one of the device's 32K-
word sectors typically within 1.0s, 4K-word sectors typi-
cally within 0.5s independent of other sectors. Each sec-
tor can be independently erased minimum 100,000 times.
Sector erase suspend mode allows system software to
suspend sector erase to read or write data from any other
sector.
Writing memory data is performed in word increments of
the device's 32K-word sectors typically within 0.8s and
4K-word sectors typically within 0.1s. Word program sus-
pend mode enables the system to read data or execute
code from any other memory array location.
MX28F160C3T/B features with individual sectors lock-
ing by using a combination of bits thirty-nine sector lock-
bits and WP, to lock and unlock sectors.
The status register indicates when the WSM's sector
erase, word program or lock configuration operation is
done.
The access time is 70/90/110ns (tELQV) over the oper-
ating temperature range (-40
°
C to +85
°
C) and VCC sup-
ply voltage range of 2.7V~3.6V.
MX28F160C3T/B's power saving mode feature substan-
tially reduces active current when the device is in static
mode (addresses not switching). In this mode, the typi-
cal ICCS current is 7uA (CMOS) at 3.0V VCC.
As CE and RP are at VCC, ICC CMOS standby mode is
enabled. When RP is at GND, the reset mode is enabled
which minimize power consumption and provide data
write protection.
A reset time (tPHQV) is required from RP switching high
until outputs are valid. Similarly, the device has a wake
time (tPHEL) from RP-high until writes to the CUI are
recognized. With RP at GND, the WSM is reset and the
status register is cleared.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX28F160C3BXAC-90G 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX28F160C3BXAI-11 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX28F160C3BXAI-11G 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX28F160C3BXAI-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX28F160C3BXAI-70G 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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