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參數(shù)資料
| 型號： | MT58L512Y32D |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 16Mb SYNCBURST⑩ SRAM |
| 中文描述： | ⑩的SRAM 16Mb的SYNCBURST |
| 文件頁數(shù)： | 31/34頁 |
| 文件大?。?/td> | 526K |
| 代理商： | MT58L512Y32D |
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16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
ADVANCE
FBGA PART MARKING GUIDE
SDK PC
Product Family
S = SRAM
M = SRAM Mechanical sample
X = SRAM Engineering sample
Product Type
B = QDR
burst of 2
C = QDR
burst of 4
D = DDR
F = SyncBurst
, Pipelined, Single-Cycle Deslect
G = SyncBurst, Pipelined, Double-Cycle Deslect
H = SyncBurst, Flow-Through
J = ZBT
, Pipelined
K = ZBT, Flow-Through
Density
B = 2Mb, 3.3V V
DD
C = 2Mb, 2.5V V
DD
D = 2Mb, 1.8V V
DD
F = 4Mb, 3.3V V
DD
G = 4Mb, 2.5V V
DD
H = 4Mb, 1.8V V
DD
J = 8Mb, 3.3V V
DD
K = 8Mb, 2.5V V
DD
L = 8Mb, 1.8V V
DD
M= 16Mb, 3.3V V
DD
N = 16Mb, 2.5V V
DD
P = 16Mb, 1.8V V
DD
Width
B = x18, 3.3V V
DD
Q
C = x18, 2.5V V
DD
Q
D = x18, 3.3V & 2.5V V
DD
Q
F = x18, HSTL V
DD
Q
G = x32, 3.3V V
DD
Q
H = x32, 2.5V V
DD
Q
J = x32, 3.3V & 2.5V V
DD
Q
K = x32, HSTL V
DD
Q
L = x36, 3.3V V
DD
Q
M = x36, 2.5V V
DD
Q
N = x36, 3.3V & 2.5V V
DD
Q
P = x36, HSTL V
DD
Q
Q = x72, 3.3V V
DD
Q
R = x72, 2.5V V
DD
Q
S = x72, 3.3V & 2.5V V
DD
Q
T = x72, HSTL V
DD
Q
Speed Grade
B = -3
C = -3.3
D = -4
F = -4.4
G = -5
H = -6
J = -7
K = -7.5
Q = 32Mb, 3.3V V
DD
R = 32Mb, 2.5V V
DD
S = 32Mb, 1.8V V
DD
T = 64Mb, 3.3V V
DD
V = 64Mb, 2.5V V
DD
W= 64Mb, 1.8V V
DD
X = 128Mb, 3.3V V
DD
Y = 128Mb, 2.5V V
DD
Z = 128Mb, 1.8V V
DD
L = -8
M = -8.5
N = -9
P = -9.5
Q = -10
R = -10.5
S = -11
T = -12
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, and
Micron Technology, Inc.
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by
Micron Technology, Inc., and Motorola Inc.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT58L64L18F | 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| MT58L32L32F | 32K x 32， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| MT58L32L36F | 32K x 36， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出，流通式同步脈沖靜態(tài)RAM) |
| MT58L64L18P | 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L32L32P | 32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L512Y32DT-10 | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512Y32DT-10 ES | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V |
| MT58L512Y32DT-6 | 制造商:Cypress Semiconductor 功能描述:DS2KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512Y32PT-10 IT | 制造商:Cypress Semiconductor 功能描述:16MB 512KX32 SRAM PLASTIC IND |
| MT58L512Y32PT-6 | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V |
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