參數(shù)資料
型號(hào)： MT58L512Y32D
廠商： Micron Technology, Inc.
英文描述： 16Mb SYNCBURST⑩ SRAM
中文描述： ⑩的SRAM 16Mb的SYNCBURST
文件頁(yè)數(shù)： 14/34頁(yè)
文件大?。?/td> 526K
代理商： MT58L512Y32D
14
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
ADVANCE
3.3V V
DD
, 2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0oC
￡
T
A
￡
+70oC; V
DD
= +3.3V ±0.165V; V
DD
Q = +2.5V ±0.125V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
CONDITIONS
Data bus (DQx)
Inputs
SYMBOL
V
IH
Q
V
IH
MIN
1.7
1.7
MAX
UNITS
V
V
NOTES
1, 2
1, 2
V
DD
Q + 0.3
V
DD
+ 0.3
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
V
IL
IL
I
IL
O
-0.3
-1.0
-1.0
0.7
1.0
1.0
V
1, 2
3
0V
￡
V
IN
￡
V
DD
Output(s) disabled,
0V
￡
V
IN
￡
V
DD
Q (DQx)
I
OH
= -2.0mA
I
OH
= -1.0mA
μA
μA
Output High Voltage
V
OH
V
OH
1.7
2.0
–
–
V
V
1, 4
1, 4
Output Low Voltage
I
OL
= 2.0mA
I
OL
= 1.0mA
V
OL
V
OL
–
–
0.7
0.4
V
V
1, 4
1, 4
Supply Voltage
Isolated Output Buffer Supply
V
DD
V
DD
Q
3.135
2.375
3.6
2.625
V
V
1
1
2.5V V
DD
, 2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0oC
￡
T
A
￡
+70oC; V
DD
= +2.5V ±0.125V; V
DD
Q = +2.5V ±0.125V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
CONDITIONS
Data bus (DQx)
Inputs
SYMBOL
V
IH
Q
V
IH
MIN
1.7
1.7
MAX
UNITS
V
V
NOTES
1, 2
1, 2
V
DD
Q + 0.3
V
DD
+ 0.3
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
V
IL
IL
I
IL
O
-0.3
-1.0
-1.0
0.7
1.0
1.0
V
1, 2
3
0V
￡
V
IN
￡
V
DD
Output(s) disabled,
0V
￡
V
IN
￡
V
DD
Q (DQx)
I
OH
= -2.0mA
I
OH
= -1.0mA
μA
μA
Output High Voltage
V
OH
V
OH
1.7
2.0
–
–
V
V
1, 4
1, 4
Output Low Voltage
I
OL
= 2.0mA
I
OL
= 1.0mA
V
OL
V
OL
–
–
0.7
0.4
V
V
1, 4
1, 4
Supply Voltage
Isolated Output Buffer Supply
V
DD
V
DD
Q
2.375
2.375
2.625
2.625
V
V
1
1
NOTE:
1. All voltages referenced to V
SS
(GND).
2. For 3.3V V
DD
:
Overshoot:
Undershoot:
Power-up:
For 2.5V V
DD
:
Overshoot:
Undershoot:
Power-up:
3. MODE has an internal pull-up, and input leakage = ±10μA.
4. The load used for V
OH
, V
OL
testing is shown in Figure 4 for 2.5V I/O. AC load current is higher than the shown DC
values. AC I/O curves are available upon request.
5. This parameter is sampled.
V
IH
￡
+4.6V for t
￡
t
KC/2 for I
￡
20mA
V
IL
3
-0.7V for t
￡
t
KC/2 for I
￡
20mA
V
IH
￡
+3.6V and V
DD
￡
3.135V for t
￡
200ms
V
IH
￡
+3.6V for t
￡
t
KC/2 for I
￡
20mA
V
IL
3
-0.5V for t
￡
t
KC/2 for I
￡
20mA
V
IH
￡
+2.65V and V
DD
￡
2.375V for t
￡
200ms
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