參數(shù)資料
型號(hào)： MT58L512Y32D
廠商： Micron Technology, Inc.
英文描述： 16Mb SYNCBURST⑩ SRAM
中文描述： ⑩的SRAM 16Mb的SYNCBURST
文件頁(yè)數(shù)： 13/34頁(yè)
文件大小： 526K
代理商： MT58L512Y32D
13
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
ADVANCE
3.3V V
DD
, ABSOLUTE MAXIMUM
RATINGS*
Voltage on V
DD
Supply
Relative to V
SS
................................ -0.5V to +4.6V
Voltage on V
DD
Q Supply
Relative to V
SS
................................ -0.5V to +4.6V
V
IN
(DQx) ....................................-0.5V to V
DD
Q + 0.5V
V
IN
(inputs) ................................... -0.5V to V
DD
+ 0.5V
Storage Temperature (TQFP) .............. -55oC to +150oC
Storage Temperature (FBGA) .............. -55oC to +125oC
Junction Temperature** ................................... +150oC
Short Circuit Output Current............................100mA
2.5V V
DD
, ABSOLUTE MAXIMUM
RATINGS*
Voltage on V
DD
Supply
Relative to V
SS
................................ -0.3V to +3.6V
Voltage on V
DD
Q Supply
Relative to V
SS
................................ -0.3V to +3.6V
V
IN
(DQx) ....................................-0.3V to V
DD
Q + 0.3V
V
IN
(inputs) ................................... -0.3V to V
DD
+ 0.3V
Storage Temperature (TQFP) .............. -55oC to +150oC
Storage Temperature (FBGA) .............. -55oC to +125oC
Junction Temperature** ................................... +150oC
Short Circuit Output Current............................100mA
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional opera-
tion of the device at these or any other conditions above
those indicated in the operational sections of this speci-
fication is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reli-
ability.
**Maximum junction temperature depends upon pack-
age type, cycle time, loading, ambient temperature and
airflow. See Micron Technical Note TN-05-14 for more
information.
3.3V V
DD
, 3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0oC
￡
T
A
￡
+70oC; V
DD
= +3.3V ±0.165V; V
DD
Q = +3.3V ±0.165V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
CONDITIONS
SYMBOL
V
IH
V
IL
IL
I
IL
O
MIN
2.0
-0.3
-1.0
-1.0
MAX
V
DD
+ 0.3
0.8
1.0
1.0
UNITS
V
V
μA
μA
NOTES
1, 2
1, 2
3
0V
￡
V
IN
￡
V
DD
Output(s) disabled,
0V
￡
V
IN
￡
V
DD
I
OH
= -4.0mA
I
OL
= 8.0mA
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
V
OH
V
OL
V
DD
V
DD
Q
2.4
–
3.135
3.135
–
V
V
V
V
1, 4
1, 4
1
1, 5
0.4
3.465
3.465
NOTE:
1. All voltages referenced to V
SS
(GND).
2. For 3.3V V
DD
:
Overshoot:
Undershoot:
Power-up:
For 2.5V V
DD
:
Overshoot:
Undershoot:
Power-up:
3. MODE has an internal pull-up, and input leakage = ±10μA.
4. The load used for V
OH
, V
OL
testing is shown in Figure 2. AC load current is higher than the stated DC values. AC I/O
curves are available upon request.
5. V
DD
Q should never exceed V
DD
. V
DD
and V
DD
Q can be connected together.
V
IH
￡
+4.6V for t
￡
t
KC/2 for I
￡
20mA
V
IL
3
-0.7V for t
￡
t
KC/2 for I
￡
20mA
V
IH
￡
+3.6V and V
DD
￡
3.135V for t
￡
200ms
V
IH
￡
+3.6V for t
￡
t
KC/2 for I
￡
20mA
V
IL
3
-0.5V for t
￡
t
KC/2 for I
￡
20mA
V
IH
￡
+2.65V and V
DD
￡
2.375V for t
￡
200ms
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