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參數(shù)資料
| 型號： | MT58L512Y32D |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 16Mb SYNCBURST⑩ SRAM |
| 中文描述： | ⑩的SRAM 16Mb的SYNCBURST |
| 文件頁數(shù)： | 26/34頁 |
| 文件大?。?/td> | 526K |
| 代理商： | MT58L512Y32D |
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16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
ADVANCE
BYPASS
When the BYPASS instruction is loaded in the in-
struction register and the TAP is placed in a Shift-DR
state, the bypass register is placed between TDI and TDO.
The advantage of the BYPASS instruction is that it
shortens the boundary scan path when multiple devices
are connected together on a board.
RESERVED
These instruction are not implemented but are re-
served for future use. Do not use these instructions.
tTLTH
Test Clock
(TCK)
1
2
3
4
5
6
Test Mode Select
(TMS)
tTHTL
Test Data-Out
(TDO)
tTHTH
Test Data-In
(TDI)
tTHMX
tMVTH
tTHDX
tDVTH
tTLOX
tTLOV
DON’T CARE
UNDEFINED
TAP TIMING
TAP AC ELECTRICAL CHARACTERISTICS
(Notes 1, 2) (+20oC
￡
T
J
￡
+100oC; +2.4V
￡
V
DD
￡
+2.6V)
DESCRIPTION
Clock
Clock cycle time
Clock frequency
Clock HIGH time
Clock LOW time
Output Times
TCK LOW to TDO unknown
TCK LOW to TDO valid
TDI valid to TCK HIGH
TCK HIGH to TDI invalid
Setup Times
TMS setup
Capture setup
Hold Times
TMS hold
Capture hold
SYMBOL
MIN
MAX
UNITS
t
THTH
f
TF
t
THTL
t
TLTH
100
ns
10
MHz
ns
ns
40
40
t
TLOX
t
TLOV
t
DVTH
t
THDX
0
ns
ns
ns
ns
20
10
10
t
MVTH
t
CS
10
10
ns
ns
t
THMX
t
CH
10
10
ns
ns
NOTE:
1.
t
CS and
t
CH refer to the setup and hold time requirements of latching data from the boundary scan register.
2. Test conditions are specified using the load in Figure 7.
相關PDF資料 |
PDF描述 |
|---|---|
| MT58L64L18F | 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| MT58L32L32F | 32K x 32， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| MT58L32L36F | 32K x 36， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出，流通式同步脈沖靜態(tài)RAM) |
| MT58L64L18P | 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L32L32P | 32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L512Y32DT-10 | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512Y32DT-10 ES | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V |
| MT58L512Y32DT-6 | 制造商:Cypress Semiconductor 功能描述:DS2KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512Y32PT-10 IT | 制造商:Cypress Semiconductor 功能描述:16MB 512KX32 SRAM PLASTIC IND |
| MT58L512Y32PT-6 | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V |
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