參數(shù)資料
型號： MT58L512Y32D
廠商： Micron Technology, Inc.
英文描述： 16Mb SYNCBURST⑩ SRAM
中文描述： ⑩的SRAM 16Mb的SYNCBURST
文件頁數(shù)： 18/34頁
文件大?。?/td> 526K
代理商： MT58L512Y32D
18
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
ADVANCE
Q
50
V = 1.5V
Z = 50
Figure 1
Q
351
317
5pF
+3.3V
Figure 2
3.3V V
DD
, 3.3V I/O AC TEST CONDITIONS
Input pulse levels ................... V
IH
= (V
DD
/2.2) + 1.5V
.................... V
IL
= (V
DD
/2.2) - 1.5V
Input rise and fall times...................................... 1ns
Input timing reference levels .......................V
DD
/2.2
Output reference levels............................. V
DD
Q/2.2
Output load .............................. See Figures 1 and 2
LOAD DERATING CURVES
Micron 1 Meg x 18, 512K x 32 and 512K x 36
SyncBurst SRAM timing is dependent upon the capaci-
tive loading on the outputs.
Consult the factory for copies of I/O current versus
voltage curves.
3.3V I/O Output Load Equivalents
3.3V V
DD
, 2.5V I/O AC TEST CONDITIONS
Input pulse levels ............... V
IH
= (V
DD
/2.64) + 1.25V
................ V
IL
= (V
DD
/2.64) - 1.25V
Input rise and fall times...................................... 1ns
Input timing reference levels .....................V
DD
/2.64
Output reference levels................................ V
DD
Q/2
Output load .............................. See Figures 3 and 4
2.5V V
DD
, 2.5V I/O AC TEST CONDITIONS
Input pulse levels .................... V
IH
= (V
DD
/2) + 1.25V
..................... V
IL
= (V
DD
/2) - 1.25V
Input rise and fall times...................................... 1ns
Input timing reference levels ..........................V
DD
/2
Output reference levels................................ V
DD
Q/2
Output load .............................. See Figures 3 and 4
Q
50
V = 1.25V
Z = 50
Figure 3
Q
351
317
5pF
+3.3V
Figure 4
2.5V I/O Output Load Equivalents
相關(guān)PDF資料
PDF描述
MT58L64L18F 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM)
MT58L32L32F 32K x 32， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM)
MT58L32L36F 32K x 36， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出，流通式同步脈沖靜態(tài)RAM)
MT58L64L18P 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器)
MT58L32L32P 32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT58L512Y32DT-10 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT58L512Y32DT-10 ES 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V
MT58L512Y32DT-6 制造商:Cypress Semiconductor 功能描述:DS2KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT58L512Y32PT-10 IT 制造商:Cypress Semiconductor 功能描述:16MB 512KX32 SRAM PLASTIC IND
MT58L512Y32PT-6 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*