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參數(shù)資料
| 型號： | MT58L512Y32D |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 16Mb SYNCBURST⑩ SRAM |
| 中文描述： | ⑩的SRAM 16Mb的SYNCBURST |
| 文件頁數(shù)： | 16/34頁 |
| 文件大?。?/td> | 526K |
| 代理商： | MT58L512Y32D |
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16
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
ADVANCE
NOTE:
1. If V
DD
= +3.3V, then V
DD
Q = +3.3V or +2.5V. If V
DD
= +2.5V, then V
DD
Q = +2.5V.
Voltage tolerances: +3.3V ±0.165 or +2.5V ±0.125V for all values of V
DD
and V
DD
Q.
2. I
DD
is specified with no output current and increases with faster cycle times. I
DD
Q increases with faster cycle times and
greater output loading.
3. “ Device deselected” means device is in power-down mode as defined in the truth table. “ Device selected” means
device is active (not in power-down mode).
4. Typical values are measured at 3.3V, 25oC, and 10ns cycle time.
I
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
(Note 1, unless otherwise noted)(0oC
￡
T
A
￡
+70oC)
DESCRIPTION
Power Supply
Current:
Operating
Power Supply
Current: Idle
CONDITIONS
SYMBOL
TYP
-6
-7.5
-10
UNITS NOTES
Device selected; All inputs
￡
V
IL
or
3
V
IH
; Cycle time
3
t
KC (MIN);
V
DD
= MAX; Outputs open
Device selected; V
DD
= MAX;
ADSC#, ADSP#, GW#, BWx#, ADV#
3
V
IH
; All inputs
￡
V
SS
+ 0.2 or
3
V
DD
- 0.2;
Cycle time
3
t
KC (MIN)
Device deselected; V
DD
= MAX;
All inputs
￡
V
SS
+ 0.2 or
3
V
DD
- 0.2;
All inputs static; CLK frequency = 0
Device deselected; V
DD
= MAX;
All inputs
￡
V
IL
or
3
V
IH
;
All inputs static; CLK frequency = 0
Device deselected; V
DD
= MAX;
ADSC#, ADSP#, GW#, BWx#, ADV#
3
V
IH
; All inputs
￡
V
SS
+ 0.2 or
3
V
DD
- 0.2;
Cycle time
3
t
KC (MIN)
I
DD
225
475
425
325
mA
2, 3, 4
I
DD
1
55
110
100
85
mA
2, 3, 4
CMOS Standby
I
SB
2
0.4
10
10
10
mA
3, 4
TTL Standby
I
SB
3
8
25
25
25
mA
3, 4
Clock Running
I
SB
4
55
110
90
85
mA
3, 4
MAX
相關(guān)PDF資料 |
PDF描述 |
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| MT58L64L18F | 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| MT58L32L32F | 32K x 32， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| MT58L32L36F | 32K x 36， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出，流通式同步脈沖靜態(tài)RAM) |
| MT58L64L18P | 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L32L32P | 32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L512Y32DT-10 | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512Y32DT-10 ES | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V |
| MT58L512Y32DT-6 | 制造商:Cypress Semiconductor 功能描述:DS2KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512Y32PT-10 IT | 制造商:Cypress Semiconductor 功能描述:16MB 512KX32 SRAM PLASTIC IND |
| MT58L512Y32PT-6 | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V |
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