參數(shù)資料
型號(hào): MT58L512Y32D
廠商: Micron Technology, Inc.
英文描述: 16Mb SYNCBURST⑩ SRAM
中文描述: ⑩的SRAM 16Mb的SYNCBURST
文件頁(yè)數(shù): 2/34頁(yè)
文件大?。?/td> 526K
代理商: MT58L512Y32D
2
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
ADVANCE
FUNCTIONAL BLOCK DIAGRAM
1 MEG x 18
SA0, SA1, SAs
ADDRESS
REGISTER
ADV#
CLK
BINARY
COUNTER AND
LOGIC
CLR
Q1
Q0
ADSC#
20
20
18
20
BWb#
BWa#
BWE#
CE#
CE2
CE2#
BYTE “b”
WRITE REGISTER
BYTE “a”
WRITE REGISTER
ENABLE
REGISTER
SA0'
SA1'
OE#
SENSE
1 Meg x 9 x 2
MEMORY
ARRAY
ADSP#
2
SA0-SA1
MODE
GW#
PIPELINED
ENABLE
DQs
DQPa
DQPb
2
OUTPUT
REGISTERS
INPUT
REGISTERS
E
BYTE “b”
WRITE DRIVER
BYTE “a”
WRITE DRIVER
OUTPUT
BUFFERS
9
9
9
9
18
18
18
18
18
NOTE:
Functional block diagrams illustrate simplified device operation. See truth table, pin descriptions and timing diagrams for
detailed information.
FUNCTIONAL BLOCK DIAGRAM
512K x 32/36
ADDRESS
REGISTER
ADV#
CLK
BINARY
COUNTER
CLR
Q1
Q0
ADSP#
ADSC#
MODE
19
19
17
19
BWd#
BWc#
BWb#
BWa#
BWE#
GW#
CE#
CE2
CE2#
OE#
BYTE “d”
WRITE REGISTER
BYTE “c”
WRITE REGISTER
BYTE “b”
WRITE REGISTER
BYTE “a”
WRITE REGISTER
ENABLE
REGISTER
PIPELINED
ENABLE
DQs
DQPa
DQPb
DQPc
DQPd
4
OUTPUT
REGISTERS
SENSE
512(x32)
512(x36)
ARRAY
OUTPUT
BUFFERS
E
BYTE “a”
WRITE DRIVER
BYTE “b”
WRITE DRIVER
BYTE “c”
WRITE DRIVER
BYTE “d”
WRITE DRIVER
INPUT
REGISTERS
SA0, SA1, SAs
SA0'
9
9
9
9
9
9
36
36
36
36
36
9
9
SA1'
SA0-SA1
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