參數(shù)資料
型號： MT47H64M8CF-5EAT:F
元件分類： DRAM
英文描述： DDR DRAM, PBGA60
封裝： 8 X 10 MM, ROHS COMPLIANT, FBGA-60
文件頁數(shù)： 52/139頁
文件大?。?/td> 9398K
Table 1: Key Timing Parameters
Speed Grade
Data Rate (MT/s)
tRC (ns)
CL = 3
CL = 4
CL = 5
CL = 6
-25E
400
533
800
55
-25
400
533
667
800
55
-3E
400
667
n/a
54
-3
400
533
667
n/a
55
-37E
400
533
n/a
55
-5E
400
n/a
55
Table 2: Addressing
Parameter
128 Meg x 4
64 Meg x 8
32 Meg x 16
Configuration
32 Meg x 4 x 4 banks
16 Meg x 8 x 4 banks
8 Meg x 16 x 4 banks
Refresh count
8K
Row address
A[13:0] (16K)
A[12:0] (8K)
Bank address
BA[1:0] (4)
Column address
A[11, 9:0] (2K)
A[9:0] (1K)
Figure 1: 512Mb DDR2 Part Numbers
Example Part Number: MT47H128M4B6-25E :D
Configuration
256 Meg x 4
128 Meg x 8
64 Meg x 16
128M4
64M8
32M16
Speed Grade
tCK = 5ns, CL = 3
tCK = 3.75ns, CL = 4
tCK = 3ns, CL = 5
tCK = 3ns, CL = 4
tCK = 2.5ns, CL = 6
tCK = 2.5ns, CL = 5
-5E
-37E
-3
-3E
-25
-25E
-
Configuration
MT47H
Package
Speed
Revision
:
{
Package
Pb-free
84-ball 12mm x 12.5mm FBGA
60-ball 12mm x 10mm FBGA
Lead solder
84-ball 12mm x 12.5mm FBGA
60-ball 12mm x 10mm FBGA
CC
CB
GC
GB
Low power
Industrial temperature
Automotive temperature
L
IT
AT
Revision
:B/:D/:F
Note: 1. Not all speeds and configurations are available in all packages.
512Mb: x4, x8, x16 DDR2 SDRAM
Features
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
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