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| 型號： | MT46V64M8 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 16 Meg x 8 x 4 banks DDR SDRAM(16M x 8 x 4組,雙數(shù)據(jù)速率同步動態(tài)RAM) |
| 中文描述： | 16梅格× 8 × 4銀行DDR SDRAM內(nèi)存（1,600 × 8 × 4組，雙數(shù)據(jù)速率同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 22/70頁 |
| 文件大?。?/td> | 2524K |
| 代理商： | MT46V64M8 |
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22
512Mb: x4, x8, x16 DDR SDRAM
512Mx4x8x16DDR_A.p65
–
Rev. A; Pub 10/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
512Mb: x4, x8, x16
DDR SDRAM
ADVANCE
Data from any READ burst may be truncated with
a BURST TERMINATE command, as shown in Figure
11. The BURST TERMINATE latency is equal to the
READ (CAS) latency, i.e., the BURST TERMINATE
command should be issued
x
cycles after the READ
command, where
x
equals the number of desired data
element pairs (pairs are required by the 2
n
-prefetch
architecture).
Data from any READ burst must be completed or
truncated before a subsequent WRITE command can
be issued. If truncation is necessary, the BURST TERMI-
NATE command must be used, as shown in Figure 12.
The
t
DQSS (MIN) case is shown; the
t
DQSS (MAX) case
has a longer bus idle time. (
t
DQSS [MIN] and
t
DQSS
[MAX] are defined in the section on WRITEs.)
A READ burst may be followed by, or truncated
with, a PRECHARGE command to the same bank
provided that auto precharge was not activated. The
PRECHARGE command should be issued
x
cycles after
the READ command, where
x
equals the number of
desired data element pairs (pairs are required by the 2
n
-
prefetch architecture). This is shown in Figure 13.
Following the PRECHARGE command, a subsequent
command to the same bank cannot be issued until
t
RP
is met. Note that part of the row precharge time is
hidden during the access of the last data elements.
READs (continued)
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