- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄229297 > MT2VDDT832UY-75XX 8M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 PDF資料下載
參數(shù)資料
| 型號： | MT2VDDT832UY-75XX |
| 元件分類： | DRAM |
| 英文描述： | 8M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 |
| 封裝： | LEAD FREE, DIMM-100 |
| 文件頁數(shù)： | 6/27頁 |
| 文件大小： | 420K |
| 代理商： | MT2VDDT832UY-75XX |
第1頁第2頁第3頁第4頁第5頁當(dāng)前第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁
32MB, 64MB (x32, SR)
100-PIN DDR UDIMM
pdf: 09005aef808ebdbc, source: 09005aef808e914b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD2C8_16x32UG.fm - Rev. D 9/04 EN
14
2004 Micron Technology, Inc. All rights reserved.
Table 13:
IDD Specifications and Conditions – 64MB Module
DDR SDRAM components only
Notes: 1–5, 8, 10, 14, 49; notes appear on pages 17–20; 0°C
≤ T
A ≤ +70°C; VDD = VDDQ = +2.5V ±0.2V
MAX
PARAMETER/CONDITION
SYMBOL
-6
-75Z/-75
UNITS
NOTES
OPERATING CURRENT: One device bank; Active-Precharge;
tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM and DQS inputs
changing once per clock cyle; Address and control inputs
changing once every two clock cycles
IDD0
250
240
mA
20, 43
OPERATING CURRENT: One device bank; Active -Read Precharge;
Burst = 4; tRC = tRC (MIN); tCK = tCK (MIN); IOUT= 0mA; Address
and control inputs changing once per clock cycle
IDD1
340
320
mA
20, 43
PRECHARGE POWER-DOWN STANDBY CURRENT: All device
banks idle; Power-down mode; tCK = tCK (MIN); CKE = (LOW)
IDD2P
8
mA
21, 28, 45
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
tCK = tCK MIN; CKE = HIGH; Address and other control inputs
changing once per clock cycle. VIN= VREF for DQ, DQS, and DM
IDD2F
100
90
mA
46
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode; tCK = tCK (MIN); CKE = LOW
IDD3P
60
50
mA
21, 28, 45
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device
bank; Active-Precharge; tRC = tRAS (MAX); tCK = tCK (MIN); DQ,
DM and DQS inputs changing twice per clock cycle; Address and
other control inputs changing once per clock cycle
IDD3N
120
100
mA
20
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One
bank active; Address and control inputs changing once per clock
cycle; tCK = tCK (MIN); IOUT = 0mA
IDD4R
680
300
mA
20, 43
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One
device bank active; Address and control inputs changing once
per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs
changing twice per clock cycle
IDD4W
390
320
mA
20
AUTO REFRESH CURRENT
tREFC = tRFC (MIN)
IDD5
510
470
mA
20, 45
tREFC = 7.8125s
IDD5A
12
mA
24, 45
SELF REFRESH CURRENT: CKE
≤ 0.2V
IDD6
88
mA
9
OPERATING CURRENT: Four device bank interleaving READs
(BL = 4) with auto precharge, tRC = tRC (MIN); tCK = tCK (MIN);
Address and control inputs change only during Active READ or
WRITE commands
IDD7
820
700
mA
20, 44
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MB84VD22183EA-85PBS | SPECIALTY MEMORY CIRCUIT, PBGA71 |
| MB84VD22184EA-90PBS | SPECIALTY MEMORY CIRCUIT, PBGA71 |
| M93C66-WMB3TP | 256 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8 |
| MT48LC4M16A2P-75:G | 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| M93C06-MB6G | 16 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT2-X-00-526-3-A21-B-C | 制造商:Carling Technologies 功能描述:M-SERIES CIRCUIT BREAKER - Bulk |
| MT3 | 功能描述:接線端子工具和配件 Markg Tag 5x10mm Horizontal RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Tools & Accessories 類型:End Bracket |
| MT-3 | 功能描述:烙鐵 Weller Chisel Tip For SP23/SP23D RoHS:否 制造商:Weller 產(chǎn)品:Soldering Stations 類型:Digital, Iron, Stand, Cleaner 瓦特:50 W 最大溫度:+ 850 F 電纜類型:US Cord Included |
| MT3/H-1 | 功能描述:接線端子工具和配件 Marking Tag, HorizontalImprint "1" RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Tools & Accessories 類型:End Bracket |
| MT3/H-2 | 功能描述:接線端子工具和配件 Marking Tag, HorizontalImprint "2" RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Tools & Accessories 類型:End Bracket |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。