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參數(shù)資料
| 型號： | MT2VDDT832UY-75XX |
| 元件分類： | DRAM |
| 英文描述： | 8M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 |
| 封裝： | LEAD FREE, DIMM-100 |
| 文件頁數(shù)： | 26/27頁 |
| 文件大?。?/td> | 420K |
| 代理商： | MT2VDDT832UY-75XX |
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32MB, 64MB (x32, SR)
100-PIN DDR UDIMM
pdf: 09005aef808ebdbc, source: 09005aef808e914b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD2C8_16x32UG.fm - Rev. D 9/04 EN
8
2004 Micron Technology, Inc. All rights reserved.
Burst Length
Read and write accesses to DDR SDRAM devices are
burst oriented, with the burst length being program-
mable, as shown in Figure 4, Mode Register Definition
Diagram. The burst length determines the maximum
number of column locations that can be accessed for a
given READ or WRITE command. Burst lengths of 2, 4,
or 8 locations are available for both the sequential and
the interleaved burst types.
Reserved states should not be used, as unknown
operation or incompatibility with future versions may
result.
When a READ or WRITE command is issued, a block
of columns equal to the burst length is effectively
selected. All accesses for that burst take place within
this block, meaning that the burst will wrap within the
block if a boundary is reached. The block is uniquely
selected by A1–A8 when the burst length is set to two,
by A2–A8 when the burst length is set to four and by
A3–A8 when the burst length is set to eight.
The
remaining (least significant) address bit(s) is (are) used
to select the starting location within the block. The
programmed burst length applies to both READ and
WRITE bursts.
Burst Type
Accesses within a given burst may be programmed
to be either sequential or interleaved; this is referred to
as the burst type and is selected via bit M3.
The ordering of accesses within a burst is deter-
mined by the burst length, the burst type and the start-
ing column address, as shown in Table 6, Burst
Definition Table, on page 9.
Read Latency
The READ latency is the delay, in clock cycles,
between the registration of a READ command and the
availability of the first bit of output data.
If a READ command is registered at clock edge n,
and the latency is m clocks, the data will be available
nominally coincident with clock edge n + m. Table 7,
CAS Latency (CL) Table, on page 9, indicates the oper-
ating frequencies at which each CAS latency setting
can be used.
Reserved states should not be used as unknown
operation or incompatibility with future versions may
result.
Figure 4: Mode Register Definition
Diagram
M3 = 0
Reserved
2
4
8
Reserved
M3 = 1
Reserved
2
4
8
Reserved
Operating Mode
Normal Operation
Normal Operation/Reset DLL
All other states reserved
0
1
-
0
-
0
-
0
-
0
-
0
-
Valid
-
0
1
Burst Type
Sequential
Interleaved
CAS Latency
Reserved
2.5
Reserved
Burst Length
M0
0
1
0
1
0
1
0
1
Burst Length
CAS Latency BT
0*
A9
A7 A6 A5 A4 A3
A8
A2 A1 A0
Mode Register (Mx)
Address Bus
97
6
5
4
3
82
1
0
M1
0
1
0
1
M2
0
1
M3
M4
0
1
0
1
0
1
0
1
M5
0
1
0
1
M6
0
1
M6-M0
M8 M7
Operating Mode
A10
A12 A11
BA0
BA1
10
11
12
13
0*
14
* M14 and M13 (BA1 and BA0)
must be “0, 0” to select the
base mode register (vs. the
extended mode register).
M9
M10
M12 M11
Burst Length
CAS Latency BT
0*
A9
A7 A6 A5 A4 A3
A8
A2 A1 A0
Mode Register (Mx)
Address Bus
97
6
5
4
3
82
1
0
Operating Mode
A10
A11
BA0
BA1
10
11
12
13
* M13 and M12 (BA1and BA0)
must be “0, 0” to select the
base mode register (vs. the
extended mode register).
32MB Module Address Bus
64MB Module Address Bus
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