參數(shù)資料
型號(hào)： MB8116165B-60
廠商： Fujitsu Limited
英文描述： 1 M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述： 1米× 16位的超頁(yè)模式動(dòng)態(tài)RAM的CMOS（1米× 16位超級(jí)頁(yè)面存取模式動(dòng)態(tài)內(nèi)存）
文件頁(yè)數(shù)： 1/29頁(yè)
文件大小： 575K
代理商： MB8116165B-60
DS05-11305-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS
1 M
HYPER PAGE MODE DYNAMIC RAM
×
16 BITS
MB8116165B-50/-60
CMOS 1,048,576
×
16 BITS Hyper Page Mode Dynamic RAM
I
DESCRIPTION
The Fujitsu MB8116165B is a fully decoded CMOS Dynamic RAM (DRAM) that contains 16,777,216 memory
cells accessible in 16-bit increments. The MB8116165B features a “hyper page” mode of operation whereby
high-speed random access of up to 256-bits of data within the same row can be selected. The MB8116165B
DRAM is ideally suited for mainframe, buffers, hand-held computers video imaging equipment, and other memory
applications where very low power dissipation and high bandwidth are basic requirements of the design. Since
the standby current of the MB8116165B is very small, the device can be used as a non-volatile memory in
equipment that uses batteries for primary and/or auxiliary power.
The MB8116165B is fabricated using silicon gate CMOS and Fujitsu’s advanced four-layer polysilicon and two-
layer aluminum process. This process, coupled with advanced stacked capacitor memory cells, reduces the
possibility of soft errors and extends the time interval between memory refreshes. Clock timing requirements for
the MB8116165B are not critical and all inputs are TTL compatible.
I
PRODUCT LINE & FEATURES
Parameter
MB8116165B-50
50 ns max.
84 ns min.
25 ns max.
15 ns max.
20 ns min.
660 mW max.
11 mW max. (TTL level) / 5.5 mW max. (CMOS level)
MB8116165B-60
60 ns max.
104 ns min.
30 ns max.
15 ns max.
25 ns min.
550 mW max.
RAS Access Time
Random Cycle Time
Address Access Time
CAS Access Time
Hyper Page Mode Cycle Time
Low Power
Dissipation
Operating Current
Standby Current
1,048,576 words
×
16 bits organization
Silicon gate, CMOS, Advanced Stacked
Capacitor Cell
All input and output are TTL compatible
4,096 refresh cycles every 65.6 ms
Early write or OE controlled write capability
RAS-only, CAS-before-RAS, or Hidden Refresh
Hyper Page Mode, Read-Modify-Write
capability
On chip substrate bias generator for high
performance
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
相關(guān)PDF資料
PDF描述
MB8116400A-50 CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB8116400A-60 CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB8116400A-70 CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB8116400B-50 4 M ×4 BITS Fast Page Mode Dynamic RAM(CMOS 4 M ×4 位快速頁(yè)面存取模式RAM)
MB8116400B-60 4 M ×4 BITS Fast Page Mode Dynamic RAM(CMOS 4 M ×4 位快速頁(yè)面存取模式RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB8116E 制造商:FUJITSU 功能描述: 制造商:FUJITSU 功能描述:8116E
MB8117800A-60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 M X 8 BIT FAST PAGE MODE DYNAMIC RAM
MB8117800A-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 M X 8 BIT FAST PAGE MODE DYNAMIC RAM
MB812 功能描述:ACCY MOUNT BMM 3/4 58A RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:*
MB812.833 功能描述:ACCY MOUNT BMM 3/4 58A RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:*
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*