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參數(shù)資料
| 型號(hào)： | M5M4V16169DRT-10 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| 中文描述： | 16MCDRAM：16米（100萬(wàn)字由16位）與16K的緩存內(nèi)存（1024字由16位）的SRAM |
| 文件頁(yè)數(shù)： | 52/64頁(yè) |
| 文件大小： | 737K |
| 代理商： | M5M4V16169DRT-10 |
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M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
K
CMd#
CS#
DRAM Write Transfer 1 (WB1->WB2->DRAM)
Buffer Write (DIN->WB1)
2
3
4
5
6
7
8
9
10
11
12
13
14
1
RAS#
CAS#
DTD#
Ad0-2
Ad3-11
WB2 [0-7]
WB1[0]
New Data[from WB1(0-7)]
Old Data
**Col
Ad0-Ad2=Low
PCG
BW
DPD DPD
DES
DPD DPD
BW
D3
ACT
BW
DWT1
BW
PCG
BW
DPD
BW
DNOP
BW
DNOP
BW
DPD DPD DPD
BW
BW
D3
BW
BW
BW
DQ0-15
tRC
tRP
tRCD
Row
Row
tRAS
tRWL
D1
D2
D4
D5
D6
D7
D0
D1
D2
D4
D5
DRAM
SRAM
D0
0
0
WB1 mask[0]
WB1[1]
1
1
WB1 mask[1]
WB1[2]
WB1 mask[2]
WB1[3]
WB1 masl[3]
WB1[4]
WB1 mask[4]
WB1[5]
WB1 mask[5]
WB1[6]
WB1 mask[6]
WB1[7]
WB1 mask[7]
2
2
3
3
4
4
5
6
7
detail
52
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| M5M4V16169DRT-15 | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-7 | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-8 | 22182053 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M4V16169DRT-15 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
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