參數(shù)資料
型號: M5M4V16169DRT-10
廠商: Mitsubishi Electric Corporation
英文描述: 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
中文描述: 16MCDRAM:16米(100萬字由16位)與16K的緩存內(nèi)存(1024字由16位)的SRAM
文件頁數(shù): 43/64頁
文件大?。?/td> 737K
代理商: M5M4V16169DRT-10
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
43
K
CMd#
DRAM Read Transfer (DRAM -> RB1-> RB2) Latency set=1
2
3
4
5
6
7
8
9
10
11
12
13
14
1
RAS#
CAS#
DTD#
Ad0-2
Ad3-11
RB1
New Data
Old Data
SRAM operation can be freely performed.
** Ad3-Ad7 are column block addresses (Ad8~Ad11=Low).
**Col
CS#
Ad0-Ad2=Low
PCG
DPD DPD
DPD DPD
ACT
DRT
PCG
DPD
DNOP
DNOP
DPD DPD DPD
BR
BR
BR
BR
BR
BR
BR
BR
BR
BR
BR
BR
BR
BR
DQ0-15
tRC
tRP
tRCD
Row
Row
tCBF
tRAS
tRSH
Old
Old
Old
Old
Old
Old
Old
Old
Old
New New New New New
DRAM
SRAM
New Data
Old Data
RB2
Latency x t
K
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M5M4V16169DRT-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM