參數(shù)資料
型號(hào): M5M4V16169DRT-10
廠商: Mitsubishi Electric Corporation
英文描述: 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
中文描述: 16MCDRAM:16米(100萬字由16位)與16K的緩存內(nèi)存(1024字由16位)的SRAM
文件頁數(shù): 39/64頁
文件大?。?/td> 737K
代理商: M5M4V16169DRT-10
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
39
K
2
3
4
5
6
7
8
9
10
11
12
13
14
1
CMd#
RAS#
CAS#
DTD#
Ad0-11
CS#
DPD
DPD DPD ACT
DNOP DNOP DNOP DNOP
PCG DPD
DPD DPD DPD
Row
DPD is recommended during no operation to save power.
DRAM Power Down / DRAM Activate / DRAM Precharge
CMs#
CC0#
DQC(u/l)
WE#
CC1#
G#
As0-9
DQ0-15
SRAM operation can be freely performed.
相關(guān)PDF資料
PDF描述
M5M4V16169DRT-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V16169DRT-15 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DRT-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DRT-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM