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參數(shù)資料
| 型號(hào)： | M5M4V16169DRT-10 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| 中文描述： | 16MCDRAM：16米（100萬(wàn)字由16位）與16K的緩存內(nèi)存（1024字由16位）的SRAM |
| 文件頁(yè)數(shù)： | 27/64頁(yè) |
| 文件大?。?/td> | 737K |
| 代理商： | M5M4V16169DRT-10 |
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M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
**-15 spec is the same as M5M4V16169TP/RT-15
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
TIMING REQUIREMENTS
(CLK pulse, input signals setup / hold time to CLK edge)
Input Pulse Levels:
Input Timing Measurement Reference Level:
Symbol
Parameter
Min.
8
3
3
3
1
Max
tK
tKH
tKL
tS
tH
Clock Cycle Time
Clock High Pulse Width
Clock Low Pulse Width
Setup Time for Inputs
Hold Time for Inputs
Limits
Min.
10
3.5
4
3
1
Max
-8
-10
Unit
ns
ns
ns
ns
ns
-7
Min.
7
3
3
3
1
Max
27
VIH=3.0V,VIL=0.0V (LVTTL)
1.5V (LVTTL)
Min.
15
5
5
4
1
Max
-15
(Ta=0~70°C , Vdd=3.3±0.3V for -8,and -10, Vdd=3.3±0.15V for -7
Vss=0V, unless otherwise noted)
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| M5M4V16169DRT-15 | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-7 | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-8 | 22182053 |
| M5M4V16G50DFP-10 | 16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M4V16169DRT-15 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
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