參數(shù)資料
型號: M5M4V16169DRT-10
廠商: Mitsubishi Electric Corporation
英文描述: 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
中文描述: 16MCDRAM:16米(100萬字由16位)與16K的緩存內(nèi)存(1024字由16位)的SRAM
文件頁數(shù): 46/64頁
文件大?。?/td> 737K
代理商: M5M4V16169DRT-10
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
K
CMd#
DRAM Read Transfer (DRAM -> RB1-> RB2) Latency set=4
2
3
4
5
6
7
8
9
10
11
12
13
14
1
RAS#
CAS#
DTD#
Ad0-2
Ad3-11
RB1
New Data
Old Data
SRAM operation can be freely performed.
** Ad3-Ad7 are column block addresses (Ad8~Ad11=Low).
**Col
CS#
Ad0-Ad2=Low
PCG
DPD DPD
DPD DPD
ACT
DRT
PCG
DPD
DNOP
DNOP
DPD DPD
BR
BR
BR
BR
BR
BR
BR
BR
BR
BR
BR
BR
BR
BR
DQ0-15
tRC
tRP
tRCD
Row
Row
tCBF
tRAS
tRSH
Old
Old
Old
Old
Old
Old
Old
Old
Old
New New
DRAM
SRAM
Old
Old
Old
46
DNOP
RB2
New Data
Old Data
Latency x t
K
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M5M4V16169DRT-15 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DRT-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DRT-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM