參數(shù)資料
型號(hào)： M38C24M4A-XXXFP
元件分類： 微控制器/微處理器
英文描述： 8-BIT, MROM, 5 MHz, MICROCONTROLLER, PQFP64
封裝： 14 X 14 MM, 0.80 MM PITCH, PLASTIC, LQFP-64
文件頁(yè)數(shù)： 55/102頁(yè)
文件大?。?/td> 1369K
代理商： M38C24M4A-XXXFP
Rev.2.00
May 28, 2004
page 56 of 100
38C2 Group (A Version)
Table 11 Summary of 38C2 group (A version)’s flash memory version
FLASH MEMORY MODE
The 38C2 group (A version)’s flash memory version has an internal
new DINOR (DIvided bit line NOR) flash memory that can be rewrit-
ten with a single power source when VCC is 4.5 to 5.5 V, and 2 power
sources when VCC is 3.0 to 4.5 V.
For this flash memory, three flash memory modes are available in
which to read, program, and erase: the parallel I/O and standard
serial I/O modes in which the flash memory can be manipulated us-
ing a programmer and the CPU rewrite mode in which the flash
memory can be manipulated by the Central Processing Unit (CPU).
Summary
Table 11 lists the summary of the 38C2 group (A version)’s flash
memory version.
This flash memory version has some blocks on the flash memory as
shown in Figure 61 and each block can be erased.
In addition to the ordinary User ROM area to store the MCU opera-
tion control program, the flash memory has a Boot ROM area that is
used to store a program to control rewriting in CPU rewrite and stan-
dard serial I/O modes. This Boot ROM area has had a standard se-
rial I/O mode control program stored in it when shipped from the
factory. However, the user can write a rewrite control program in this
area that suits the user’s application system. This Boot ROM area
can be rewritten in only parallel I/O mode.
Item
Power source voltage (Vcc)
Program/Erase VPP voltage (VPP)
Flash memory mode
Erase block division
User ROM area
Boot ROM area
Program method
Erase method
Program/Erase control method
Number of commands
Number of program/Erase times
ROM code protection
Specifications
VCC = 2.5 to 5.5 V (Note 1)
VCC = 2.5 to (VCC at program/erase) + 0.5 V (Note 2)
VPP = 4.5 to 5.5 V, VCC = 3.0 to 5.5 V
3 modes; Parallel I/O mode, Standard serial I/O mode, CPU rewrite mode
Refer to Fig. 61.
Not divided (4K bytes) (Note 3)
In units of bytes
Block erase
Program/Erase control by software command
5 commands
100 times
Available in parallel I/O mode and standard serial I/O mode
Notes 1: It is the rating value when Vcc = 5.0 to 5.5 V at program/erase.
2: It is the rating value when Vcc = 3.0 to 5.0 V at program/erase.
3: The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory. This Boot ROM area can be erased and
written in only parallel I/O mode.
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