參數(shù)資料
型號(hào): M29W004T
廠商: 意法半導(dǎo)體
英文描述: 4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb閃速存儲(chǔ)器)
中文描述: 的4Mb(512KB的× 8,引導(dǎo)塊)低電壓?jiǎn)坞娫撮W存(4Mb的閃速存儲(chǔ)器)
文件頁(yè)數(shù): 18/30頁(yè)
文件大?。?/td> 199K
代理商: M29W004T
AI02095
E
G
W
A0-A18
DQ0-DQ7
VALID
VALID
VCC
tVCHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWH
tGHWL
RB
tWHRL
Figure 7. WriteAC Waveforms, W Controlled
Note:
Address are latched on the falling edge of W, Datais latched on the rising edge of W.
stopwheneraseiscompleted.Aftercompletionthe
StatusRegisterbitDQ5returns’1’iftherehasbeen
an Erase Failure.
Erase Suspend (ES) Instruction.
The Block
Eraseoperationmay besuspendedbythisinstruc-
tion which consists of writing the command B0h
without anyspecificaddress.No Codedcyclesare
required. It permits reading of data from another
block and programming in another block while an
erase operation is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution. Writing this command during Erase
timeout will, in addition to suspending the erase,
terminate the timeout. The Toggle bit DQ6 stops
togglingwhentheP/E.C.is suspended.The Toggle
bitswill stoptogglingbetween0.1
μ
sand15
μ
s after
the Erase Suspend (ES) command has been writ-
ten. The device will then automatically be set to
Read Memory Array mode. When erase is sus-
pended, a Read from blocks being erased will
output DQ2 togglingand DQ6 at ’1’. A Read from
a blocknot beingerasedreturnsvalid data.During
suspension the memory will respond only to the
Erase Resume ER and the Program PG instruc-
tions. AProgram operation can be initiatedduring
erase suspend in one of the blocks not being
erased. Itwillresultin bothDQ2and DQ6toggling
whenthedatais beingprogrammed.ARead/Reset
command will definitively abort erasure and result
in invalid data in the blocks being erased.
18/30
M29W004T, M29W004B
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