參數(shù)資料
型號： M29W008B
廠商： 意法半導體
英文描述： 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導入塊)低壓單電源閃速存儲器)
中文描述： 8兆（1兆× 8，引導塊）低電壓單電源快閃記憶體（8米位（1兆× 8，導入塊），低壓單電源閃速存儲器）
文件頁數(shù)： 1/30頁
文件大?。?/td> 197K
代理商： M29W008B
AI02189
20
A0-A19
W
DQ0-DQ7
VCC
M29W008T
M29W008B
E
VSS
8
G
RP
RB
Figure 1. LogicDiagram
M29W008T
M29W008B
8 Mbit (1Mb x8, Boot Block)
Low Voltage Single Supply Flash Memory
2.7V to 3.6VSUPPLYVOLTAGEfor
PROGRAM, ERASEand READ OPERATIONS
FASTACCESS TIME: 100ns
FASTPROGRAMMING TIME:10
μ
s typical
PROGRAM/ERASECONTROLLER (P/E.C.)
– ProgramByte-by-Byte
– StatusRegister bits and Ready/BusyOutput
MEMORYBLOCKS
– BootBlock (Top or Bottomlocation)
– Parameterand Main blocks
BLOCK, MULTI-BLOCKand CHIPERASE
MULTI BLOCKPROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program anotherBlockduring
Erase Suspend
LOW POWER CONSUMPTION
– Stand-byand AutomaticStand-by
100,000 PROGRAM/ERASECYCLES per
BLOCK
20 YEARSDATARETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– Device Code, M29W008T:D2h
– Device Code, M29W008B:DCh
DESCRIPTION
The M29W008 is a non-volatilememory that may
be erasedelectricallyat theblock or chipleveland
programmed in-system on a Byte-by-Byte basis
using only a single 2.7V to 3.6V V
CC
supply. For
Programand Erase operationsthe necessaryhigh
voltagesare generated internally. The device can
also be programmedin standard programmers.
The arraymatrix organisationallows each blockto
be erased and reprogrammed without affecting
otherblocks. Blocks can be protectedagainst pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application. Each block can be programmed
and erased over 100,000 cycles.
August 1998
1/30
TSOP40 (N)
10 x 20 mm
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