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參數(shù)資料
| 型號： | M29W008B |
| 廠商： | 意法半導體 |
| 英文描述： | 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導入塊)低壓單電源閃速存儲器) |
| 中文描述： | 8兆（1兆× 8，引導塊）低電壓單電源快閃記憶體（8米位（1兆× 8，導入塊），低壓單電源閃速存儲器） |
| 文件頁數(shù)： | 21/30頁 |
| 文件大?。?/td> | 197K |
| 代理商： | M29W008B |
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Symbol
Alt
Parameter
M29W008T / M29W008B
Unit
-90
-100
V
CC
= 3.0V to 3.6V
C
L
= 30pF
V
CC
= 2.7V to 3.6V
C
L
= 30pF
Min
Max
Min
Max
t
AVAV
t
WC
Address Valid to Next Address Valid
90
100
ns
t
WLEL
t
WS
Write Enable Low to Chip Enable Low
0
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
45
50
ns
t
DVEH
t
DS
Input Valid to Chip EnableHigh
45
50
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
0
ns
t
EHWH
t
WH
Chip Enable High to Write Enable High
0
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
30
30
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
0
0
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
45
50
ns
t
GHEL
Output Enable High Chip Enable Low
0
0
ns
t
VCHWL
t
VCS
V
CC
High to Write Enable Low
50
50
μ
s
t
EHGL
t
OEH
Chip Enable High to Output EnableLow
0
0
ns
t
PHPHH
(1,2)
t
VIDR
RP Rise TIme to V
ID
500
500
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
EHRL(1)
t
BUSY
Program Erase Valid to RB Delay
90
90
ns
t
PHWL(1)
t
RSP
RP High to Write Enable Low
4
4
μ
s
Notes:
1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotectionoperation.
Table16A. Write AC Characteristics,Chip EnableControlled
(T
A
= 0 to 70
°
C, –20 to 85
°
C or–40 to 85
°
C)
POWER SUPPLY
PowerUp
ThememoryCommandInterfaceis reseton power
up to ReadArray.EitherE or W mustbe tiedto V
IH
during Power Up to allow maximum security and
thepossibilityto writea commandon thefirstrising
edge of E and W. Any write cycle initiation is
blockedwhen Vcc is below V
LKO
.
Supply Rails
Normal precautionsmust be taken for supply volt-
age decoupling; each device in a system should
havethe V
CC
rail decoupledwith a0.1
μ
F capacitor
close to the V
CC
and V
SS
pins. The PCB trace
widths should be sufficient to carry the V
CC
pro-
gramand erase currents required.
21/30
M29W008T M29W008B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W010B45K6F | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W010B45N1 | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W010B45N1E | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W010B45N1F | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W008B-100N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008B-100N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008B-100N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008B-120N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008B-120N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
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